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J112RLRAG

Onsemi

J112RLRAG by Onsemi

J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.

Median Price

$0.291

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 363 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

363

-

$0.291

$0.241

$0.215

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,625 parts In-Stock

1+ parts

$0.226

100+ parts

-

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-

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1,625

$0.226

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-

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Vyrian

USA . 8,464 parts In-Stock

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8,464

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Distributors (Availability)

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Corphita

USA . 529 parts In-Stock

1+ parts

$0.214

100+ parts

-

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529

$0.214

-

-

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Corohmni

South Africa . 158 parts In-Stock

1+ parts

$0.238

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-

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158

$0.238

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Component Stockers USA

USA . 531 parts In-Stock

1+ parts

$0.240

100+ parts

$0.230

1k+ parts

-

10k+ parts

-

531

$0.240

$0.230

-

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AZTECH Wire

Italy . 482 parts In-Stock

1+ parts

$21.920

100+ parts

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482

$21.920

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Perfect Parts

USA . 44,167 parts In-Stock

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44,167

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TANS Electronics

Latvia . 7,291 parts In-Stock

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7,291

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Kulean Microsystems

USA . 5,431 parts In-Stock

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5,431

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Problanco Electronics

Mexico . 4,422 parts In-Stock

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4,422

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SupplyDigital Components

Austria . 3,812 parts In-Stock

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3,812

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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169

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Overview

Unlock the power of cutting-edge technology with the J112RLRAG Small Signal Field Effect Transistor by Onsemi. Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled performance in chopper applications. Its high-quality construction and innovative design ensure reliable operation and efficient power dissipation. Ideal for a wide range of electronic projects, this transistor is a game-changer in the world of connectivity and circuitry. Elevate your creations with the J112RLRAG and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides protection and insulation for the internal components, making the transistor durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and higher electron mobility compared to P-channel transistors, providing better performance.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into different applications.

Transistor Application: CHOPPER

Specifically designed for chopper applications, ensuring optimized performance and efficiency in chopping circuits.

Maximum Power Dissipation (Abs): 0.4 W

Can handle moderate power levels without overheating, ensuring stable operation in various electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers low noise, high input impedance, and fast switching speeds, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for operation in challenging environments without compromising performance.

Maximum Drain-Source On Resistance: 50 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency and overall performance of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) J112RLRAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J112RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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