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NTJS4160NT1G

Onsemi

NTJS4160NT1G by Onsemi

NTJS4160NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.8A and 0.06 ohm RDS(ON), in a small outline package with GULL WING terminals for surface mount assembly.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 353,223 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

353,223

-

$0.092

$0.077

$0.068

Verical

USA . 290,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

290,345

-

-

-

$0.086

Distributors (In-Stock)

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Digiode

USA . 1,040 parts In-Stock

1+ parts

$0.072

100+ parts

-

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1,040

$0.072

-

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Vyrian

USA . 8,483 parts In-Stock

1+ parts

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8,483

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-

-

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Atlantic Semiconductor

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,476 parts In-Stock

1+ parts

$0.068

100+ parts

-

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2,476

$0.068

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-

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Corohmni

South Africa . 185 parts In-Stock

1+ parts

$0.076

100+ parts

-

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185

$0.076

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AZTECH Wire

Italy . 146 parts In-Stock

1+ parts

$16.940

100+ parts

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146

$16.940

-

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Continental Prestige Electronics

USA . 637,216 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.070

10k+ parts

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637,216

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$0.070

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Authorized Procurement Solutions

USA . 150,000 parts In-Stock

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150,000

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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SupplyDigital Components

Austria . 4,488 parts In-Stock

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4,488

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Kulean Microsystems

USA . 3,664 parts In-Stock

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3,664

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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TANS Electronics

Latvia . 1,945 parts In-Stock

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1,945

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Problanco Electronics

Mexico . 542 parts In-Stock

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542

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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137

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Overview

Upgrade your electronics with the NTJS4160NT1G by Onsemi, a top-quality N-channel small signal field effect transistor (FET) that offers superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this FET is designed for switching applications with a built-in diode for added convenience. With a low on-resistance and high drain current capability, this transistor delivers excellent efficiency and precision in a compact, surface-mount package. Enhance your electronic projects with the NTJS4160NT1G and experience the difference in quality and performance that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower on-resistance and higher mobility, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity, enhancing the reliability of the transistor in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and fast response times.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, increasing its versatility in different circuit designs.

Package Shape: RECTANGULAR

The rectangular shape allows for compact and efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminals provide strong mechanical support and reliable solder connections, improving the overall durability of the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have high input impedance and can be easily turned on and off, making them suitable for switching applications.

No. of Terminals: 6

Having 6 terminals allows for flexibility in circuit design and easier integration into complex electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good performance, low power consumption, and high reliability in electronic applications.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency, low noise, and good temperature stability, making them ideal for various electronic applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in electronic circuits.

Maximum Drain Current (ID): 1.8 A

With a high maximum drain current rating, this transistor can handle higher current loads, making it suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.06 ohm

Low on-resistance ensures efficient power handling and minimal power loss in switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy installation and flexibility in circuit connections, enhancing the usability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable solder joints during assembly processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature rating, this transistor can withstand the heat required during the soldering process, ensuring proper solder connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTJS4160NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

1.8 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTJS4160NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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