Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
Median Price
-
Lifecycle Status
Suppliers In-Stock
2
In-Stock Inventory
1k+
Vyrian
1+ parts
100+ parts
1k+ parts
10k+ parts
Digiode
AZTECH Wire
$10.200
Problanco Electronics
SupplyDigital Components
Kulean Microsystems
TANS Electronics
Corphita
UHIMA Technologies
Corohmni
This material provides good insulation and protection for the transistor, ensuring durability and reliability.
P-channel FETs are known for their low RDS(on) values, making them efficient for switching applications.
Designed specifically for switching applications, this FET provides fast switching speeds and low power dissipation.
With a breakdown voltage of 20V, this FET can handle higher voltages without breakdown, making it suitable for a variety of applications.
With a high drain current rating, this FET can handle higher current loads without overheating, making it reliable for various applications.
With a high power dissipation rating, this FET can handle higher power levels without thermal issues, ensuring reliability in operation.
With a high operating temperature range, this FET can withstand elevated temperatures without performance degradation, making it suitable for harsh environments.
This low feedback capacitance helps in reducing signal distortion and improving overall performance in high-frequency applications.
Small Signal Field Effect Transistors (FET) NTMSD3P102R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTMSD3P102R2G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Copper Wire 12/May/2009
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
2N7002
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
1N4148
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
Shenzhen Socay Electronics
Eic Semiconductor
BAV99
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148W-7-F
Diodes Incorporated
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
2N2222A
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
FDV302P
FDV302P by Onsemi is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
2N7002K
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
BSL308PEH6327XTSA1
BSL308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for applications requiring high drain current up to 2A, low on-resistance of 0.08 ohm, and AEC-Q101 compliance.
FDV302P_NL
Fairchild Semiconductor
FDV302P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a RECTANGULAR package with GULL WING terminals and operating up to 150°C.
FDG8850NZ
FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
BSS138NH6327
BSS138NH6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.23A Drain Current and 3.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.36W at temperatures ranging from -55 to 150 °C.
BS170/D75Z
National Semiconductor
BS170/D75Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A ID, and 5 ohm RDS. It is used in applications requiring an ENHANCEMENT MODE transistor for low-power circuit designs.
ZXM61N02FTA
ZXM61N02FTA by Diodes Inc. is a N-CHANNEL FET with 20V DS breakdown voltage, 1.7A max drain current, and 0.18 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode, it can handle up to 150°C temperature making it suitable for various electronic devices.
NDS355AN
NDS355AN by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1.7A Drain Current, 0.085 ohm On Resistance, and -55 to 150 °C Operating Temperature range. Suitable for small outline packages in surface mount configurations.
2N7000
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Package Shape: ROUND;
2N7002BK,215
NXP Semiconductors
NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
SI4459ADY-T1-GE3
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
BSS139IXTSA1
Small Signal Field-Effect Transistors;
2N7002PS,125
Nexperia's 2N7002PS,125 is a N-CHANNEL FET for SWITCHING applications. With a 60V DS Breakdown Voltage and 0.32A Drain Current, it operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and withstands -55 to 150 °C temperatures.
IRLML6244TRPBF
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Pulsed Drain Current (IDM): 32 A; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
NX3008NBK,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -50 Cel; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
2N7002DW
Secos
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Maximum Power Dissipation Ambient: .2 W;
IRFL9110TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTMS4177PR2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
NTMS5838NLR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
NTMS5P02R2G
NTMS5P02R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.95A and 0.033 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
NTMS4800NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NTMS4801NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Qualification: Not Qualified; JESD-609 Code: e3;
NTMS4503NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; No. of Elements: 1;
NTMS4118NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 9 A; No. of Terminals: 8; JESD-30 Code: R-PDSO-G8;
NTMS4700NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN; Maximum Drain-Source On Resistance: .01 ohm;
NTMS4704NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e0; Package Shape: RECTANGULAR;
NTMS10P02R2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 1010 pF;
NTMS4107NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
NTMS4176PR2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NTMS4503NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-609 Code: e0; Transistor Element Material: SILICON;
NTMS4117NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; No. of Elements: 1;
NTMS4700NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Terminal Finish: TIN LEAD;
NTMS3P03R2G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; No. of Terminals: 8; Terminal Finish: Tin (Sn);
NTMS4107NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
NTMS4404NR2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; JESD-30 Code: R-PDSO-G8;
NTMS4404NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
NTMS4118NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 9 A; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 500 pF;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved