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NTA7002NT1

Onsemi

NTA7002NT1 by Onsemi

NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.

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2

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1k+

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Vyrian

USA . 8,628 parts In-Stock

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Digiode

USA . 196 parts In-Stock

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AZTECH Wire

Italy . 1,208 parts In-Stock

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$16.060

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SupplyDigital Components

Austria . 8,240 parts In-Stock

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TANS Electronics

Latvia . 4,006 parts In-Stock

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Kepictronics

USA . 3,520 parts In-Stock

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Kulean Microsystems

USA . 3,172 parts In-Stock

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Corphita

USA . 1,038 parts In-Stock

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Problanco Electronics

Mexico . 1,012 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Unlock the power of innovation with the NTA7002NT1 by Onsemi, a cutting-edge Small Signal Field Effect Transistor that delivers unparalleled performance and reliability. Designed with precision and expertise, this N-CHANNEL transistor excels in switching applications, offering seamless operation and enhanced efficiency. With a built-in diode and resistor, this product guarantees optimal functionality and convenience. Embrace the future of technology with Onsemi's exceptional quality and superior design, providing you with the value and benefits you deserve. Elevate your projects to new heights with the NTA7002NT1, where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have faster switching speeds and better efficiency compared to P-channel transistors, making this product a good choice for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Having a built-in diode and resistor simplifies circuit design and reduces the need for external components, making the product more compact and cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high-speed switching capabilities and efficient performance in electronic circuits.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and improving overall circuit layout.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels, making it suitable for use in applications that require reliable voltage regulation.

Terminal Form: GULL WING

The gull wing terminal form provides a secure attachment to the PCB, ensuring reliability and stability in operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the output voltage using a low input voltage, making them ideal for applications requiring precise voltage regulation.

Maximum Drain Current (Abs) (ID): 0.154 A

With a maximum drain current of 0.154A, this transistor can handle moderate current loads, suitable for many electronic applications.

No. of Terminals: 3

Having three terminals allows for easy connection to the circuit, offering flexibility in circuit design and layout.

Maximum Power Dissipation (Abs): 0.3 W

The maximum power dissipation of 0.3W ensures that the transistor can handle heat dissipation effectively, allowing for continuous operation without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and provides a compact design suitable for miniaturized electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability in transistor operation, making this product a dependable choice for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliable performance in challenging conditions.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance characteristics, including low leakage current and high breakdown voltage, making this product a reliable choice for electronic circuits.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability, ensuring easy and reliable connection to the circuit during assembly.

Maximum Drain-Source On Resistance: 7.5 ohm

With a low drain-source on resistance of 7.5 ohms, this transistor offers efficient conduction and low voltage drop, making it suitable for power management applications.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options, enhancing flexibility in circuit design and layout.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C ensures reliable soldering during assembly, maintaining the integrity of the connection between the transistor and the PCB.

Maximum Feedback Capacitance (Crss): 6 pF

With a maximum feedback capacitance of 6pF, this transistor minimizes the risk of feedback loops in the circuit, ensuring stable and reliable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA7002NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.154 A

Maximum Drain Current (ID):

.154 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA7002NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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