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NTA7002NT1G

Onsemi

NTA7002NT1G by Onsemi

NTA7002NT1G by Onsemi is a small signal N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.154A, and max power dissipation of 0.3W. This enhancement mode transistor operates at a max temperature of 150°C, making it suitable for various electronic devices.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 13,204 parts In-Stock

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$0.028

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$0.028

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Mouser Electronics

USA . 173,836 parts In-Stock

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$0.260

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$0.103

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$0.067

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$0.039

173,836

$0.260

$0.103

$0.067

$0.039

DigiKey

USA . 154,629 parts In-Stock

1+ parts

$0.270

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$0.103

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$0.067

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$0.047

154,629

$0.270

$0.103

$0.067

$0.047

EBV Elektronik

Germany . 2,427,000 parts In-Stock

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Arrow

USA . 402,000 parts In-Stock

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Verical

USA . 402,000 parts In-Stock

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Future Electronics

Canada . 99,000 parts In-Stock

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Rochester

USA . 49,571 parts In-Stock

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$0.043

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Master Electronics

USA . 45,000 parts In-Stock

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Farnell

UK . 24,375 parts In-Stock

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Element14

Singapore . 24,375 parts In-Stock

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Avnet

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Chip1Stop

Japan . 4,580 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 2,142 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Maritex

Poland . 117,977 parts In-Stock

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$0.221

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$0.051

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117,977

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$0.051

$0.035

$0.027

TME

Poland . 6,065 parts In-Stock

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$0.250

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$0.087

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$0.052

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$0.046

6,065

$0.250

$0.087

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$0.046

IBS Electronics

USA . 2,358,000 parts In-Stock

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Chip Stock

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NAC Semi

USA . 528,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 406,992 parts In-Stock

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Component Sense

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Bristol Electronics

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Quantum Digital Technology

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PC Components Company LLC

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Connector Distribution Corp

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Right Parts Inc.

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Semtec, LLC

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A2Z Electronics, Inc.

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Flex Direct, LLC

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Prism Electronics

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ComSIT Distribution GmbH

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Distributors (Availability)

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Ampacity Inc.

Singapore . 130,225 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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Corphita

USA . 2,453 parts In-Stock

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Component Stockers USA

USA . 463,812 parts In-Stock

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Argo Parts USA

USA . 4,086 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Continental Prestige Electronics

USA . 10,476 parts In-Stock

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Perfect Parts

USA . 606,798 parts In-Stock

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GreenTree Electronics

Israel . 150,000 parts In-Stock

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RC Electronics

USA . 103,677 parts In-Stock

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Kepictronics

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ChipstoGo Electronic ltd

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Kulean Microsystems

USA . 5,859 parts In-Stock

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S.R.D Solutions

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Problanco Electronics

Mexico . 2,524 parts In-Stock

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TANS Electronics

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UHIMA Technologies

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SupplyDigital Components

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Overview

Discover the NTA7002NT1G by Onsemi, a top-quality Small Signal Field Effect Transistor perfect for switching applications. With a single configuration including a built-in diode and resistor, this N-channel transistor offers enhanced performance and reliability. Designed for surface mounting, this product delivers high power dissipation and efficient operation at up to 150°C. Trust Onsemi's expertise in semiconductor technology to provide you with a superior product that meets your needs for precision and durability. Choose the NTA7002NT1G for your next project and experience the difference in performance and value that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making them a popular choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages, making it versatile for use in various circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer higher input impedance and lower leakage current, improving overall efficiency in circuit design.

Maximum Drain Current (ID): 0.154 A

The maximum drain current of 0.154A allows for handling moderate current levels, suitable for many small signal applications.

Maximum Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3W, this FET can handle heat dissipation effectively, ensuring stable performance under varying loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance, low power consumption, and high-speed operation, making it ideal for various electronic applications.

Maximum Feedback Capacitance (Crss): 6 pF

Low feedback capacitance helps reduce signal distortion and improve stability in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA7002NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.154 A

Maximum Drain Current (ID):

.154 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA7002NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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