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J110G

Onsemi

J110G by Onsemi

J110G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 18Ω. Ideal for SWITCHING applications due to its high feedback capacitance and low on resistance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,835 parts In-Stock

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Digiode

USA . 126 parts In-Stock

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AZTECH Wire

Italy . 106 parts In-Stock

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$20.940

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TANS Electronics

Latvia . 6,794 parts In-Stock

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Kulean Microsystems

USA . 5,532 parts In-Stock

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Problanco Electronics

Mexico . 5,446 parts In-Stock

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SupplyDigital Components

Austria . 4,985 parts In-Stock

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Corphita

USA . 1,695 parts In-Stock

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Perfect Parts

USA . 672 parts In-Stock

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality J110G Small Signal Field Effect Transistor by Onsemi. Known for their superior manufacturing standards, Onsemi delivers reliable products that are perfect for switching applications. With a single configuration and N-channel polarity, this transistor offers efficient performance and durability. Experience the benefits of its depletion mode operation, low power dissipation, and excellent feedback capacitance. Enhance your projects with the value and quality that Onsemi's J110G provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the transistor lightweight and durable, ensuring reliable performance in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors tend to have better conductivity and efficiency compared to P-channel transistors, making this transistor an efficient choice for switching applications.

Configuration: SINGLE

Single configuration transistors are easier to implement in circuit designs, simplifying the overall system setup.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly transition between on and off states, making it suitable for various electronic devices.

Maximum Power Dissipation (Abs): 0.31 W

With a maximum power dissipation of 0.31 W, this transistor can handle moderate power levels without overheating, ensuring stable operation.

Maximum Operating Temperature: 135 °C

The high maximum operating temperature of 135 °C allows this transistor to function reliably even in harsh environments or applications where temperature may fluctuate.

Maximum Drain-Source On Resistance: 18 ohm

The low drain-source on resistance of 18 ohms minimizes power losses and improves efficiency in switching circuits.

Maximum Feedback Capacitance (Crss): 15 pF

The low feedback capacitance of 15 pF helps reduce signal distortion and improve high-frequency performance in RF or high-speed switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) J110G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

18 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J110G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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