Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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J110RLRA by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 235°C.
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Rochester
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100+ parts
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$0.241
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$0.215
DigiKey
$0.360
Verical
$0.269
Digiode
$0.226
Vyrian
$0.238
Ampacity Inc.
$0.202
Corphita
$0.214
Corohmni
Continental Prestige Electronics
$0.230
QUARKTWIN TECHNOLOGY LTD
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Metaverse IC Inc.
Problanco Electronics
UHIMA Technologies
Kulean Microsystems
TANS Electronics
This material offers good durability and reliability for the product, making it suitable for various applications.
N-Channel FETs typically have lower ON-resistance and higher switching speeds compared to P-Channel FETs, making this product efficient for switching applications.
Designed specifically for switching applications, ensuring optimal performance and efficiency in such scenarios.
With a decent power dissipation capacity, this FET can handle moderate power levels reliably.
Low ON-resistance helps in minimizing power losses and improving efficiency in switching operations.
Small Signal Field Effect Transistors (FET) J110RLRA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
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JESD-30 Code:
JESD-609 Code:
No. of Elements:
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Operating Mode:
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Maximum Power Dissipation (Abs):
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J110RLRA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N2222A
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
1N4148WS
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Transistor & Electronic
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
1N4148
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
OHN3140U
Tt Electronics Plc
OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.
Kingwell Technonlogy
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
Comchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ABS06-32.768KHZ-T
Abracon
Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.
DMN6075S-7
Diodes Incorporated
DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
2N7000
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Terminal Form: WIRE;
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
IRLML5103TRPBF
Infineon Technologies
Infineon's IRLML5103TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.54A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.
BSS84LT1G
BSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.225W.
FDC5612
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
FDC602P
The Onsemi FDC602P is a P-CHANNEL FET with 20V DS Breakdown Voltage, 5.5A ID, and 0.033 ohm RDS. Ideal for SWITCHING applications in small outline packages with -55 to 150 °C operating range.
BS170-D27Z
BS170-D27Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating at 150°C, it comes in a ROUND package with THROUGH-HOLE terminals.
NDS332P
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
SI4447ADY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI4447ADY-T1-GE3 is a P-channel FET with 40V breakdown voltage and 7.2A drain current. Ideal for switching applications, it features a built-in diode, 0.045 ohm on-resistance, and operates in enhancement mode at up to 150°C.
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
BSS84PH6433XTMA1
BSS84PH6433XTMA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.17A Drain Current, 8 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and meets AEC-Q101 standards for automotive use.
FDS4672A
FDS4672A by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It has 11A Drain Current, 0.013 ohm On Resistance, and operates at max temp of 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
FDS9435A
The Onsemi FDS9435A is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5.3A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 175 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
DMG1013T-7
DMG1013T-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 0.46A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.27W.
BSS123
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): 260; Terminal Form: GULL WING;
FDN352AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
BSS138BK
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Reference Standard: AEC-Q101; IEC-60134;
SI2329DS-T1-GE3
SI2329DS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 8V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 2.5W.
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J110
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-30 Code: O-PBCY-T3; JESD-609 Code: e0;
J110G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-92; Package Style (Meter): CYLINDRICAL;
J110RLRAG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 25 V; No. of Elements: 1;
J110-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: 18 ohm; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-92;
J110-T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; JEDEC-95 Code: TO-92; Transistor Element Material: SILICON;
J110/D26Z(OPTION18)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-92; Transistor Application: SWITCHING;
J110/D75Z(OPTION18)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; No. of Elements: 1; Package Style (Meter): CYLINDRICAL;
J110/D27Z-J61Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Operating Mode: DEPLETION MODE;
J110/D81Z-J14Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Operating Mode: DEPLETION MODE; Qualification: Not Qualified;
J110RL1
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; Transistor Application: SWITCHING; Package Shape: ROUND;
J110RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Operating Temperature: 135 Cel; Additional Features: EUROPEAN PART NUMBER;
J110RLRA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Terminal Form: WIRE; Transistor Element Material: SILICON;
J110RLRB
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: 18 ohm; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-92;
J110RLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 135 Cel; Terminal Position: BOTTOM;
J110RLRF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
J110RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Operating Temperature: 135 Cel; JEDEC-95 Code: TO-92;
J110RLRP
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
J110J05Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Shape: ROUND; Qualification: Not Qualified;
J110LTR
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: SWITCHING; No. of Elements: 1; Maximum Drain-Source On Resistance: 18 ohm;
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