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TF414T5G

Onsemi

TF414T5G by Onsemi

TF414T5G by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. With a max operating temp of 150 °C and peak reflow temp of 260°C, it features junction technology and nickel palladium gold terminal finish. Ideal for small signal amplification in electronic circuits.

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1k+

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AZTECH Wire

Italy . 765 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Overview

Elevate your electronic projects with the TF414T5G from Onsemi, a small signal field effect transistor designed to deliver superior performance and reliability. Crafted by a trusted manufacturer renowned for their innovative technology, this N-CHANNEL FET offers seamless integration in a variety of applications. Experience the value of precision engineering with maximum power dissipation of 0.1W and a peak reflow temperature of 260 °C, ensuring optimal functionality under any conditions. Trust Onsemi to elevate your creations to new heights with the TF414T5G.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher electron mobility compared to P-channel FETs, making them more efficient for many applications.

Surface Mount: YES

The surface-mount capability allows for easy and efficient assembly onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Power Dissipation (Abs): 0.1 W

With a low maximum power dissipation, this FET can operate efficiently without overheating, ensuring reliability in various applications.

Field Effect Transistor Technology: JUNCTION

Junction FETs offer high input impedance, low noise, and good high-frequency characteristics, making them suitable for amplification and switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to withstand elevated temperatures, ensuring stability and performance in harsh environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity, corrosion resistance, and solderability, enhancing the overall reliability and lifespan of the FET.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature reduces the risk of thermal damage during soldering, ensuring proper assembly and robustness of the FET.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable solder joints without compromising the integrity of the FET, ensuring stable performance under various operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) TF414T5G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Field Effect Transistor Technology:

JUNCTION

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TF414T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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