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NVMD6P02R2G

Onsemi

NVMD6P02R2G by Onsemi

The Onsemi NVMD6P02R2G is a P-CHANNEL FET with 7.8A max drain current and 2W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.

Median Price

$0.769

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 258,425 parts In-Stock

1+ parts

-

100+ parts

$0.769

1k+ parts

$0.639

10k+ parts

$0.569

258,425

-

$0.769

$0.639

$0.569

Farnell

UK . 258,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.606

10k+ parts

-

258,425

-

-

$0.606

-

Verical

USA . 255,163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.798

10k+ parts

$0.712

255,163

-

-

$0.798

$0.712

DigiKey

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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$1.150

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20,000

-

-

$1.150

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Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.460

10k+ parts

-

2,500

-

-

$0.460

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 464 parts In-Stock

1+ parts

$0.628

100+ parts

-

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464

$0.628

-

-

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Flip Electronics

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Vyrian

USA . 8,736 parts In-Stock

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8,736

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 314 parts In-Stock

1+ parts

$0.460

100+ parts

-

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314

$0.460

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Corphita

USA . 813 parts In-Stock

1+ parts

$0.595

100+ parts

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813

$0.595

-

-

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AZTECH Wire

Italy . 1,197 parts In-Stock

1+ parts

$11.370

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1,197

$11.370

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Kepictronics

USA . 59,200 parts In-Stock

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59,200

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Kulean Microsystems

USA . 8,332 parts In-Stock

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8,332

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TANS Electronics

Latvia . 7,951 parts In-Stock

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7,951

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SupplyDigital Components

Austria . 6,526 parts In-Stock

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6,526

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Problanco Electronics

Mexico . 5,271 parts In-Stock

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5,271

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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964

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Continental Prestige Electronics

USA . 167 parts In-Stock

1+ parts

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100+ parts

$0.606

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167

-

$0.606

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Overview

Explore the world of small signal field effect transistors with the NVMD6P02R2G by Onsemi. Known for their quality and reliability, Onsemi delivers top-notch products that exceed expectations. This P-channel FET offers a wide range of applications, providing customers with exceptional value and performance. Whether you're looking to enhance your electronics projects or improve industrial systems, this transistor is the perfect solution. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel transistors are known for their lower on-resistance compared to N-Channel transistors, making them suitable for high efficiency applications.

Surface Mount: YES

Surface mount technology allows for compact and efficient placement of components on a circuit board, saving space and enabling high-density designs.

Maximum Drain Current (Abs): 7.8 A

With a high maximum drain current, this FET can handle higher power loads, making it suitable for applications requiring high current capabilities.

Maximum Power Dissipation (Abs): 2 W

The high maximum power dissipation allows for efficient heat dissipation, ensuring the FET can operate under high power conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers good performance and reliability in various applications, making this FET a reliable choice for different circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Terminal Finish: MATTE TIN

Matte Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The specified time at peak reflow temperature ensures proper soldering of the FET, leading to reliable and consistent performance in the circuit.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for efficient soldering of the FET, ensuring strong and durable connections on the circuit board.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVMD6P02R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

7.8 A

Maximum Drain Current (ID):

7.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVMD6P02R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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