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NVMD3P03R2G

Onsemi

NVMD3P03R2G by Onsemi

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain-Source On Resistance: .085 ohm; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

Median Price

$0.841

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 12,500 parts In-Stock

1+ parts

$0.598

100+ parts

$0.465

1k+ parts

$0.449

10k+ parts

-

12,500

$0.598

$0.465

$0.449

-

Farnell

UK . 127,607 parts In-Stock

1+ parts

-

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-

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127,607

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-

-

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Rochester

USA . 113,469 parts In-Stock

1+ parts

-

100+ parts

$0.841

1k+ parts

$0.698

10k+ parts

$0.622

113,469

-

$0.841

$0.698

$0.622

Verical

USA . 112,584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.872

10k+ parts

$0.777

112,584

-

-

$0.872

$0.777

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,064 parts In-Stock

1+ parts

$0.568

100+ parts

-

1k+ parts

-

10k+ parts

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1,064

$0.568

-

-

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Vyrian

USA . 372 parts In-Stock

1+ parts

$0.598

100+ parts

-

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-

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372

$0.598

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-

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Flip Electronics

USA . 49,000 parts In-Stock

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-

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49,000

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 100,001 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

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100,001

$0.297

-

-

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Corphita

USA . 666 parts In-Stock

1+ parts

$0.538

100+ parts

-

1k+ parts

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666

$0.538

-

-

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$0.598

100+ parts

-

1k+ parts

-

10k+ parts

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257

$0.598

-

-

-

Component Stockers USA

USA . 144,549 parts In-Stock

1+ parts

$0.620

100+ parts

$0.480

1k+ parts

$0.460

10k+ parts

$0.460

144,549

$0.620

$0.480

$0.460

$0.460

Infinite Electronics LLP (Excess)

. 20,002 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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20,002

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 14,164 parts In-Stock

1+ parts

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14,164

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

-

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Problanco Electronics

Mexico . 6,570 parts In-Stock

1+ parts

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6,570

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Kulean Microsystems

USA . 5,284 parts In-Stock

1+ parts

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5,284

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SupplyDigital Components

Austria . 4,921 parts In-Stock

1+ parts

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4,921

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Glotronic Ltd.

UK . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

-

-

-

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TANS Electronics

Latvia . 1,818 parts In-Stock

1+ parts

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100+ parts

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1,818

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UHIMA Technologies

Türkiye . 285 parts In-Stock

1+ parts

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10k+ parts

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285

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Technical Specifications

Small Signal Field Effect Transistors (FET) NVMD3P03R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain-Source On Resistance:

.085 ohm

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVMD3P03R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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