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NVGS3443T1G

Onsemi

NVGS3443T1G by Onsemi

NVGS3443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.4A and 0.065 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor with GULL WING terminals is designed for high power dissipation and AEC-Q101 compliance.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Rochester

USA . 33,000 parts In-Stock

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$0.282

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$0.234

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$0.209

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$0.282

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Verical

USA . 33,000 parts In-Stock

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$0.246

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$0.246

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Digiode

USA . 1,089 parts In-Stock

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$0.219

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Flip Electronics

USA . 85,000 parts In-Stock

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Chip Stock

USA . 62,000 parts In-Stock

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Vyrian

USA . 8,665 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Corphita

USA . 2,418 parts In-Stock

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$0.208

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Corohmni

South Africa . 296 parts In-Stock

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$0.231

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AZTECH Wire

Italy . 666 parts In-Stock

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$10.210

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Component Stockers USA

USA . 301 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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Kepictronics

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Kulean Microsystems

USA . 7,760 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 1,263 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Futuretech Components

Singapore . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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Overview

Enhance your electronic projects with the NVGS3443T1G by Onsemi, a high-quality P-Channel small signal Field Effect Transistor. Manufactured by Onsemi, this transistor offers reliable performance in switching applications, with a built-in diode for added convenience. With a maximum drain current of 4.4A and a low on-resistance of 0.065 ohm, this transistor provides great value and efficiency. Whether you're a hobbyist or a professional, trust the NVGS3443T1G to deliver exceptional results in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are often used for high-side switching applications and can be advantageous in certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode can provide reverse polarity protection and simplify circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Facilitates easy and convenient mounting onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle a range of voltage levels in circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on a PCB and easy placement in tight layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and can be turned on when a voltage is applied, allowing for better control in circuit designs.

Maximum Drain Current (Abs) (ID): 4.4 A

High maximum drain current rating allows for handling larger currents in switching applications.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit connections and enables versatile usage.

Maximum Power Dissipation (Abs): 2 W

Able to dissipate up to 2W of power, ensuring reliable performance under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability for the transistor.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, suitable for a wide range of environments.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its favorable electrical properties and reliability.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for the terminals.

Maximum Drain-Source On Resistance: 0.065 ohm

Low on-resistance ensures efficient power handling and minimal voltage drop across the transistor.

Terminal Position: DUAL

Dual terminal positions offer versatility in circuit board layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable solder joints during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C allows for effective soldering of the transistor onto the PCB.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality, suitable for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVGS3443T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA LOW RESISTANCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.4 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVGS3443T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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