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NVGS3130NT1G

Onsemi

NVGS3130NT1G by Onsemi

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;

Median Price

$0.504

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 141,000 parts In-Stock

1+ parts

$0.343

100+ parts

$0.328

1k+ parts

-

10k+ parts

-

141,000

$0.343

$0.328

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-

DigiKey

USA . 2,861 parts In-Stock

1+ parts

$1.830

100+ parts

$0.778

1k+ parts

$0.561

10k+ parts

-

2,861

$1.830

$0.778

$0.561

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.432

9,000

-

-

-

$0.432

Rochester

USA . 2,950 parts In-Stock

1+ parts

-

100+ parts

$0.575

1k+ parts

$0.477

10k+ parts

$0.426

2,950

-

$0.575

$0.477

$0.426

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,602 parts In-Stock

1+ parts

$0.430

100+ parts

-

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-

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1,602

$0.430

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Vyrian

USA . 1,855 parts In-Stock

1+ parts

$0.453

100+ parts

-

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1,855

$0.453

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Flip Electronics

USA . 39,000 parts In-Stock

1+ parts

-

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39,000

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,071 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

-

10k+ parts

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2,071

$0.408

-

-

-

Component Stockers USA

USA . 86,030 parts In-Stock

1+ parts

$0.830

100+ parts

$0.830

1k+ parts

$0.830

10k+ parts

$0.400

86,030

$0.830

$0.830

$0.830

$0.400

Corohmni

South Africa . 188 parts In-Stock

1+ parts

$1.130

100+ parts

-

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188

$1.130

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Microchip USA

USA . 6,941 parts In-Stock

1+ parts

$3.268

100+ parts

-

1k+ parts

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10k+ parts

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6,941

$3.268

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Kepictronics

USA . 306,000 parts In-Stock

1+ parts

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100+ parts

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306,000

-

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iodParts Technologies Inc.

India . 65,033 parts In-Stock

1+ parts

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100+ parts

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65,033

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-

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TANS Electronics

Latvia . 7,938 parts In-Stock

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7,938

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Problanco Electronics

Mexico . 3,343 parts In-Stock

1+ parts

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3,343

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-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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3,000

-

-

-

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Kulean Microsystems

USA . 2,966 parts In-Stock

1+ parts

-

100+ parts

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2,966

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-

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SupplyDigital Components

Austria . 2,633 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,633

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-

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UHIMA Technologies

Türkiye . 918 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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918

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Technical Specifications

Small Signal Field Effect Transistors (FET) NVGS3130NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVGS3130NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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