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NVGS3441T1G

Onsemi

NVGS3441T1G by Onsemi

NVGS3441T1G by Onsemi is a P-CHANNEL FET with 3.3A max drain current and 2W power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 82,807 parts In-Stock

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Flip Electronics (Authorized)

USA . 82,807 parts In-Stock

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Vyrian

USA . 671 parts In-Stock

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$0.150

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671

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Flip Electronics

USA . 82,807 parts In-Stock

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Digiode

USA . 275 parts In-Stock

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275

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Corohmni

South Africa . 387 parts In-Stock

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387

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Kulean Microsystems

USA . 7,888 parts In-Stock

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SupplyDigital Components

Austria . 7,038 parts In-Stock

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Kepictronics

USA . 4,190 parts In-Stock

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TANS Electronics

Latvia . 4,021 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,422 parts In-Stock

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Corphita

USA . 870 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Overview

Enhance your electronic designs with the NVGS3441T1G from Onsemi, a leading manufacturer known for its top-notch quality and reliability. This P-CHANNEL Small Signal Field Effect Transistor offers unmatched performance and efficiency in a compact package. Perfect for a wide range of applications, this FET provides superior power dissipation and high drain current capabilities, making it an essential component for your next project. Trust Onsemi to deliver cutting-edge technology that brings value and benefits to your designs. Elevate your creations with the NVGS3441T1G today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are efficient for switching applications and offer low on-state resistance, making this product suitable for power management circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and enabling compact designs.

Maximum Drain Current (Abs): 3.3 A

High maximum drain current rating ensures the FET can handle heavy loads and high-power applications without overheating or damage.

Maximum Power Dissipation (Abs): 2 W

A high maximum power dissipation rating indicates good thermal performance, allowing the FET to operate reliably under demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good efficiency and switching characteristics, making this FET suitable for various analog and digital applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures the FET can operate in a wide range of environmental conditions, enhancing reliability and performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability, ensuring easy and reliable solder connections during PCB assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature enhances manufacturing efficiency and reduces the risk of heat-related damage to the FET.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for robust soldering processes and ensures the FET can withstand high-temperature reflow cycles during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVGS3441T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.3 A

Maximum Drain Current (ID):

3.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVGS3441T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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