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NVLJD4007NZTBG

Onsemi

NVLJD4007NZTBG by Onsemi

NVLJD4007NZTBG by Onsemi is a N-CHANNEL FET with max drain current of 0.245A and power dissipation of 0.755W. Ideal for applications requiring small signal amplification in surface mount technology, operating at up to 150 °C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Flip Electronics

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AZTECH Wire

Italy . 1,207 parts In-Stock

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Component Stockers USA

USA . 241 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

Türkiye . 916 parts In-Stock

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Overview

Discover the NVLJD4007NZTBG by Onsemi, a top-quality N-CHANNEL Small Signal Field Effect Transistor designed for maximum performance and reliability. With surface mount capabilities and a maximum operating temperature of 150 °C, this FET is perfect for a wide range of applications. Trust in Onsemi's reputation for excellence in semiconductor technology to bring you a product that delivers exceptional value, benefits, and advantages to meet your needs. Upgrade your projects with the NVLJD4007NZTBG and experience the difference in quality and performance firsthand.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have better performance and lower on-resistance compared to P-CHANNEL FETs.

Surface Mount: YES

Surface mount FETs are easy to solder and are suitable for compact designs.

Maximum Drain Current (Abs) (ID): 0.245 A

This FET can handle a maximum continuous current of 0.245 A, making it suitable for low power applications.

Maximum Power Dissipation (Abs): 0.755 W

With a maximum power dissipation of 0.755 W, this FET can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer high input impedance and low capacitance, making them suitable for high frequency applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can operate reliably in high temperature environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections.

Maximum Time At Peak Reflow Temperature (s): 30

This FET can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this FET can be effectively soldered using standard reflow methods.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVLJD4007NZTBG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

.245 A

Maximum Drain Current (ID):

.245 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVLJD4007NZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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