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NVLJS053N12MCLTAG

Onsemi

NVLJS053N12MCLTAG by Onsemi

NVLJS053N12MCLTAG by Onsemi is a N-CHANNEL FET with 120V DS breakdown voltage, ideal for switching applications. It has 4.5A max drain current and 0.053 ohm max on resistance. Operating in enhancement mode, it can handle temperatures from -55 to 150 °C.

Median Price

$1.250

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,771 parts In-Stock

1+ parts

$1.230

100+ parts

$0.539

1k+ parts

$0.381

10k+ parts

$0.325

1,771

$1.230

$0.539

$0.381

$0.325

DigiKey

USA . 2,595 parts In-Stock

1+ parts

$1.270

100+ parts

$0.527

1k+ parts

$0.373

10k+ parts

$0.289

2,595

$1.270

$0.527

$0.373

$0.289

Flip Electronics (Authorized)

USA . 33,000 parts In-Stock

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-

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33,000

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Distributors (In-Stock)

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Vyrian

USA . 287 parts In-Stock

1+ parts

$0.257

100+ parts

-

1k+ parts

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287

$0.257

-

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Digiode

USA . 2,233 parts In-Stock

1+ parts

$0.732

100+ parts

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2,233

$0.732

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Flip Electronics

USA . 33,000 parts In-Stock

1+ parts

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33,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.257

100+ parts

-

1k+ parts

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-

491

$0.257

-

-

-

Corphita

USA . 561 parts In-Stock

1+ parts

$0.693

100+ parts

-

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561

$0.693

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QUARKTWIN TECHNOLOGY LTD

USA . 8,903 parts In-Stock

1+ parts

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8,903

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TANS Electronics

Latvia . 6,794 parts In-Stock

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6,794

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Problanco Electronics

Mexico . 3,685 parts In-Stock

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3,685

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SupplyDigital Components

Austria . 1,729 parts In-Stock

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1,729

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Kulean Microsystems

USA . 1,063 parts In-Stock

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1,063

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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767

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Experience top-notch quality and performance with the NVLJS053N12MCLTAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional Small Signal Field Effect Transistors (FET) that are perfect for switching applications. With a built-in diode and N-CHANNEL polarity, this transistor offers enhanced functionality and reliability. Its high power dissipation and wide operating temperature range make it ideal for various projects. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your systems with the NVLJS053N12MCLTAG for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications, offering good performance and efficiency.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protection, making it convenient for use in various electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.

Minimum DS Breakdown Voltage: 120 V

With a minimum breakdown voltage of 120V, this transistor can handle higher voltages, making it suitable for various power applications.

Maximum Power Dissipation (Abs): 2.1 W

With a maximum power dissipation of 2.1W, this transistor can handle moderate power levels, suitable for a wide range of applications.

Maximum Drain Current (ID): 4.5 A

The high maximum drain current of 4.5A allows this transistor to handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.053 ohm

The low drain-source on resistance of 0.053 ohms ensures efficient power transfer and low heat dissipation, ideal for high-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate reliably in high-temperature environments.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55°C to 150°C allows this transistor to function effectively in various temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVLJS053N12MCLTAG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN SOURCE

Minimum DS Breakdown Voltage:

120 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.053 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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