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5LP01SS-TL-E

Onsemi

5LP01SS-TL-E by Onsemi

5LP01SS-TL-E by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, such as temperature-sensitive circuits in consumer electronics.

Median Price

$0.675

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 8,000 parts In-Stock

1+ parts

$0.675

100+ parts

$0.338

1k+ parts

$0.135

10k+ parts

$0.084

8,000

$0.675

$0.338

$0.135

$0.084

Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Vyrian

USA . 12,658 parts In-Stock

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12,658

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Dan-Mar Components

USA . 8,000 parts In-Stock

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8,000

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Digiode

USA . 2,428 parts In-Stock

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2,428

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Distributors (Availability)

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AZTECH Wire

Italy . 877 parts In-Stock

1+ parts

$16.050

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877

$16.050

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SupplyDigital Components

Austria . 7,854 parts In-Stock

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7,854

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Kulean Microsystems

USA . 6,709 parts In-Stock

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6,709

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Problanco Electronics

Mexico . 5,466 parts In-Stock

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5,466

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TANS Electronics

Latvia . 1,861 parts In-Stock

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1,861

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Northwest PG Solutions

USA . 1,279 parts In-Stock

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1,279

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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755

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Corphita

USA . 476 parts In-Stock

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476

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Native Components

USA . 359 parts In-Stock

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359

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Corohmni

South Africa . 211 parts In-Stock

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211

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Overview

Upgrade your electronic devices with the high-quality 5LP01SS-TL-E P-CHANNEL FET by Onsemi. Designed for efficiency and reliability, this single configuration transistor offers superior performance in a compact surface mount package. From power management to audio amplification, this FET is versatile for a wide range of applications. Trust Onsemi's expertise in semiconductor technology to deliver cutting-edge solutions that enhance your products' performance and longevity. Experience the value and benefits of this transistor today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are ideal for applications requiring low power consumption and high input impedance, making this product suitable for low-power circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into various electronic devices.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum Drain Current (Abs) (ID): 0.07 A

High maximum drain current allows for handling higher power levels in the circuit without risking damage to the transistor.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power dissipation capability ensures stable operation and reliability in various operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperature environments, increasing the product's durability and reliability.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/Bismuth terminal finish provides good solderability and ensures long-term stability in various environmental conditions, enhancing the product's lifespan.

Maximum Drain Current (ID): 0.07 A

Consistent maximum drain current rating ensures stable performance under load conditions, making this transistor a reliable choice for different circuit applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LP01SS-TL-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

5LP01SS-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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