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5LP01M-TL-E

Onsemi

5LP01M-TL-E by Onsemi

5LP01M-TL-E by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.07A ID and 23Ω RDS(on). The package is RECTANGULAR with GULL WING terminals, suitable for surface mount installations.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.934

100+ parts

$1.760

1k+ parts

$1.586

10k+ parts

-

5,000

$1.934

$1.760

$1.586

-

Rochester

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

54,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.120

54,000

-

-

-

$0.120

Verical

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.086

42,000

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-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,415 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

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1,415

$0.072

-

-

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Vyrian

USA . 989 parts In-Stock

1+ parts

$0.076

100+ parts

-

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989

$0.076

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 682 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

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682

$0.068

-

-

-

Corohmni

South Africa . 455 parts In-Stock

1+ parts

$1.412

100+ parts

-

1k+ parts

-

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455

$1.412

-

-

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.934

100+ parts

$1.760

1k+ parts

$1.586

10k+ parts

-

5,000

$1.934

$1.760

$1.586

-

Kepictronics

USA . 72,540 parts In-Stock

1+ parts

-

100+ parts

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72,540

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Continental Prestige Electronics

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.070

10k+ parts

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54,000

-

-

$0.070

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QUARKTWIN TECHNOLOGY LTD

USA . 29,829 parts In-Stock

1+ parts

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29,829

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Problanco Electronics

Mexico . 6,553 parts In-Stock

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6,553

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Kulean Microsystems

USA . 5,516 parts In-Stock

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5,516

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SupplyDigital Components

Austria . 4,621 parts In-Stock

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4,621

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TANS Electronics

Latvia . 1,568 parts In-Stock

1+ parts

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1,568

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Northwest PG Solutions

USA . 1,014 parts In-Stock

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1,014

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Native Components

USA . 866 parts In-Stock

1+ parts

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866

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UHIMA Technologies

Türkiye . 586 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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586

-

-

-

-

Overview

Enhance your electronic devices with the 5LP01M-TL-E by Onsemi. Manufactured with top-quality materials and advanced technology, this P-Channel Small Signal Field Effect Transistor is perfect for switching applications. Its single configuration with a built-in diode ensures optimal performance, while its small outline package makes it easy to integrate into any design. Experience enhanced efficiency and reliability with the 5LP01M-TL-E, providing value and benefits that exceed expectations. Elevate your projects with this high-quality component from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching and control of current flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Specifically designed for switching applications, providing reliable performance in those scenarios.

Surface Mount: YES

Easy to mount on the circuit board, ideal for compact and densely populated designs.

Minimum DS Breakdown Voltage: 50 V

Can withstand high voltage levels, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Compact shape for efficient use of board space.

Terminal Form: GULL WING

Allows for easy soldering during assembly, ensuring a reliable connection.

Operating Mode: ENHANCEMENT MODE

Provides better control over the transistor's conductivity, enhancing performance in circuits.

No. of Terminals: 3

Simple three-terminal design for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Space-saving design suitable for compact electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology for efficient switching and control in electronic circuits.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring stable performance.

Maximum Drain Current (ID): 0.07 A

Capable of handling up to 0.07 Amperes of current, suitable for low-power applications.

Maximum Drain-Source On Resistance: 23 ohm

Low on-resistance for efficient current flow and minimal power loss.

Terminal Position: DUAL

Dual terminal position for versatile connectivity options.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LP01M-TL-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.07 A

Maximum Drain-Source On Resistance:

23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

5LP01M-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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