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5LP01SS-TL-H

Onsemi

5LP01SS-TL-H by Onsemi

5LP01SS-TL-H by Onsemi is a P-CHANNEL FET with 0.07A max drain current and 0.15W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C, making it suitable for various electronic devices.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 42,464 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

42,464

-

$0.092

$0.077

$0.068

DigiKey

USA . 42,464 parts In-Stock

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$0.120

42,464

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$0.120

Verical

USA . 42,464 parts In-Stock

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$0.086

42,464

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$0.086

Distributors (In-Stock)

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Digiode

USA . 2,060 parts In-Stock

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$0.072

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2,060

$0.072

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Vyrian

USA . 115 parts In-Stock

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$0.076

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115

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Ashlea Components Ltd

UK . 7,648 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,095 parts In-Stock

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$0.068

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1,095

$0.068

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Corohmni

South Africa . 96 parts In-Stock

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$0.076

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96

$0.076

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Component Stockers USA

USA . 42,876 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

42,876

$0.080

$0.070

$0.070

$0.070

Continental Prestige Electronics

USA . 42,464 parts In-Stock

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$0.070

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42,464

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$0.070

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Perfect Parts

USA . 17,920 parts In-Stock

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Kepictronics

USA . 5,985 parts In-Stock

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Kulean Microsystems

USA . 3,545 parts In-Stock

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TANS Electronics

Latvia . 1,485 parts In-Stock

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UHIMA Technologies

Türkiye . 943 parts In-Stock

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SupplyDigital Components

Austria . 886 parts In-Stock

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Problanco Electronics

Mexico . 539 parts In-Stock

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539

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Northwest PG Solutions

USA . 454 parts In-Stock

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454

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Native Components

USA . 143 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality 5LP01SS-TL-H P-CHANNEL Small Signal Field Effect Transistor by Onsemi. This surface-mount transistor offers reliable performance and efficient power dissipation, making it ideal for a wide range of applications. From amplifiers to voltage regulators, this single-channel FET provides customers with exceptional value and benefits, giving you the competitive edge in your projects. Trust Onsemi's expertise in semiconductor technology to deliver top-notch components that meet your design needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-resistance and high efficiency, making them ideal for applications requiring a small signal field effect transistor.

Configuration: SINGLE

Single configuration FETs are simpler to implement and control, making them suitable for many small signal applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Maximum Drain Current (Abs) (ID): 0.07 A

With a maximum drain current of 0.07A, this FET can handle moderate power requirements efficiently.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation of 0.15W ensures minimal heat generation and efficient operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance and enhanced efficiency in small signal applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand higher temperature environments, increasing its versatility.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good conductivity and solderability, ensuring reliable connections and ease of assembly.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature simplifies the assembly process and reduces the risk of thermal damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this FET can undergo high-temperature soldering processes without compromising its performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LP01SS-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

5LP01SS-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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