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5LP01M

Onsemi

5LP01M by Onsemi

5LP01M by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.07A ID, and 23 ohm RDS. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE AND RESISTOR. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150 °C temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,753 parts In-Stock

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Vyrian

USA . 736 parts In-Stock

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Native Components

USA . 54 parts In-Stock

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$11.385

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Northwest PG Solutions

USA . 2,053 parts In-Stock

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$12.524

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$11.272

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Kepictronics

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,568 parts In-Stock

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SupplyDigital Components

Austria . 7,363 parts In-Stock

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Kulean Microsystems

USA . 6,200 parts In-Stock

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Problanco Electronics

Mexico . 2,919 parts In-Stock

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Corphita

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Overview

Enhance your electronic designs with the 5LP01M P-Channel Field Effect Transistor from Onsemi. This small signal FET offers outstanding quality and reliability, backed by Onsemi's stellar reputation in the industry. Ideal for switching applications, this transistor features a built-in diode and resistor for added convenience. With a maximum power dissipation of 0.15W and a minimum breakdown voltage of 50V, the 5LP01M delivers exceptional performance in a compact package. Whether you're a seasoned engineer or a hobbyist, this transistor is sure to add value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: P-CHANNEL

Suitable for use in applications where P-channel transistors are required, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplified circuit design with built-in components, reducing the need for additional external components.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and efficient switching functionality.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 50 V

Offers high breakdown voltage for reliable operation in diverse voltage applications.

Package Shape: RECTANGULAR

Compact rectangular shape for efficient use of PCB real estate.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures low power consumption and improved control over the transistor.

Maximum Drain Current (Abs) (ID): 0.07 A

Can handle a maximum drain current of 0.07 A, suitable for low-power applications.

No. of Terminals: 3

Simple 3-terminal configuration for straightforward integration into circuits.

Maximum Power Dissipation (Abs): 0.15 W

Capable of dissipating up to 0.15 W of power, suitable for low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Uses MOSFET technology for efficient switching and low power consumption.

Maximum Operating Temperature: 150 °C

Operates reliably at temperatures up to 150 °C, suitable for various environmental conditions.

Transistor Element Material: SILICON

Utilizes silicon as the transistor element material for reliable and consistent performance.

Maximum Drain-Source On Resistance: 23 ohm

Low drain-source on resistance of 23 ohms for efficient switching and reduced power loss.

Terminal Position: DUAL

Dual terminal positioning for easy integration into circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LP01M attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Maximum Drain-Source On Resistance:

23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

5LP01M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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