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NTMFS4847NAT1G

Onsemi

NTMFS4847NAT1G by Onsemi

NTMFS4847NAT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE, suitable for surface mount technology.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 164,500 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

164,500

-

$0.383

$0.318

$0.283

DigiKey

USA . 164,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

-

164,500

-

-

$0.480

-

Verical

USA . 161,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.398

10k+ parts

$0.354

161,500

-

-

$0.398

$0.354

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,047 parts In-Stock

1+ parts

$0.298

100+ parts

-

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1,047

$0.298

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Chip Stock

USA . 60,000 parts In-Stock

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60,000

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Vyrian

USA . 8,427 parts In-Stock

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8,427

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,633 parts In-Stock

1+ parts

$0.283

100+ parts

-

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1,633

$0.283

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-

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.314

100+ parts

-

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234

$0.314

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AZTECH Wire

Italy . 903 parts In-Stock

1+ parts

$19.140

100+ parts

-

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903

$19.140

-

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Continental Prestige Electronics

USA . 164,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.288

10k+ parts

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164,500

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-

$0.288

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

1+ parts

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7,500

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RC Electronics

USA . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 6,737 parts In-Stock

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6,737

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Problanco Electronics

Mexico . 6,388 parts In-Stock

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6,388

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Kulean Microsystems

USA . 5,783 parts In-Stock

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5,783

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SupplyDigital Components

Austria . 2,940 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

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2,250

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Kepictronics

USA . 1,500 parts In-Stock

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1,500

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 154 parts In-Stock

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154

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Overview

Discover the power of the NTMFS4847NAT1G by Onsemi, a top-quality Small Signal Field Effect Transistor that is setting new industry standards. With Onsemi's reputation for excellence in manufacturing, this N-CHANNEL FET offers exceptional performance in switching applications, making it an essential component for your projects. The built-in diode and low on-resistance ensure optimal efficiency, while the compact design and flat terminals make installation a breeze. Experience the reliability and value of Onsemi's NTMFS4847NAT1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in one direction, making it suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers built-in diode for reverse polarity protection, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 30 V

Provides a good margin of safety for various voltage requirements.

Package Shape: RECTANGULAR

Optimizes space utilization on circuit boards.

Operating Mode: ENHANCEMENT MODE

Provides high efficiency and fast switching speed.

No. of Terminals: 5

Offers flexibility in circuit connections.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable performance and low power consumption.

Transistor Element Material: SILICON

Known for its stability and efficiency in electronic components.

Terminal Finish: TIN

Helps in improving solderability and conductivity.

Maximum Drain Current (ID): 11.5 A

Supports high current requirements in various applications.

Maximum Drain-Source On Resistance: 0.0062 ohm

Provides low resistance for efficient current flow.

Terminal Position: DUAL

Allows for versatile installation and connection options.

Case Connection: DRAIN

Ensures efficient heat dissipation for improved performance.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high temperatures during reflow soldering process.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering process without damage.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4847NAT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

11.5 A

Maximum Drain-Source On Resistance:

.0062 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS4847NAT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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