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SCH1345-TL-H

Onsemi

SCH1345-TL-H by Onsemi

SCH1345-TL-H by Onsemi is a P-CHANNEL FET with 4.5A max drain current and 1W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as in surface mount configurations for electronic devices.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 757,077 parts In-Stock

1+ parts

-

100+ parts

$0.145

1k+ parts

$0.121

10k+ parts

$0.107

757,077

-

$0.145

$0.121

$0.107

Verical

USA . 740,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.134

740,000

-

-

-

$0.134

Distributors (In-Stock)

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Digiode

USA . 1,109 parts In-Stock

1+ parts

$0.113

100+ parts

-

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-

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1,109

$0.113

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Chip Stock

USA . 25,000 parts In-Stock

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25,000

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-

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Vyrian

USA . 6,808 parts In-Stock

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6,808

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 185 parts In-Stock

1+ parts

$0.100

100+ parts

-

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185

$0.100

-

-

-

Corphita

USA . 96 parts In-Stock

1+ parts

$0.107

100+ parts

-

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96

$0.107

-

-

-

AZTECH Wire

Italy . 277 parts In-Stock

1+ parts

$13.630

100+ parts

-

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277

$13.630

-

-

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Continental Prestige Electronics

USA . 797,077 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.143

10k+ parts

-

797,077

-

-

$0.143

-

Authorized Procurement Solutions

USA . 150,000 parts In-Stock

1+ parts

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150,000

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Kepictronics

USA . 19,397 parts In-Stock

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19,397

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Kulean Microsystems

USA . 4,999 parts In-Stock

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4,999

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TANS Electronics

Latvia . 2,017 parts In-Stock

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2,017

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SupplyDigital Components

Austria . 662 parts In-Stock

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662

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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659

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Problanco Electronics

Mexico . 191 parts In-Stock

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191

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Overview

Enhance your electronic projects with the SCH1345-TL-H by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor. Manufactured by industry leader Onsemi, this single configuration FET offers high performance and reliability for a wide range of applications. With a maximum drain current of 4.5 A and a maximum power dissipation of 1 W, this transistor is perfect for your circuit design needs. Trust Onsemi for superior technology and unparalleled value in semiconductor components.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high input impedance and low output impedance, making them suitable for applications requiring high performance and efficiency.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications where only one FET is needed.

Surface Mount: YES

Surface mount design saves space on circuit boards and allows for automated assembly, making it ideal for compact devices and mass production.

Maximum Drain Current (Abs) (ID): 4.5 A

High maximum drain current capability allows for handling higher power applications and provides flexibility in design.

Maximum Power Dissipation (Abs): 1 W

Low power dissipation helps in reducing heat generation and improves overall efficiency of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability, low power consumption, and fast response times, making it suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance in demanding environments and applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides excellent solderability and ensures a reliable electrical connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature helps in preventing damage to the FET during soldering process, ensuring product reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering and ensures secure attachment of the FET to the circuit board.

Technical Specifications

Small Signal Field Effect Transistors (FET) SCH1345-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SCH1345-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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