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SCH1434TL

Onsemi

SCH1434TL by Onsemi

SCH1434TL by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 0.165 ohm RDS(on), and 2A ID. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,329 parts In-Stock

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Vyrian

USA . 1,007 parts In-Stock

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TANS Electronics

Latvia . 8,300 parts In-Stock

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SupplyDigital Components

Austria . 7,011 parts In-Stock

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Problanco Electronics

Mexico . 2,702 parts In-Stock

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Corphita

USA . 835 parts In-Stock

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Corohmni

South Africa . 348 parts In-Stock

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Kulean Microsystems

USA . 303 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Overview

Enhance your electronic projects with the SCH1434TL by Onsemi! Crafted with precision and expertise, this small signal field-effect transistor offers high performance and reliability. Ideal for switching applications, this N-channel transistor features a single configuration with a built-in diode, making it versatile and efficient. With a maximum power dissipation of 0.8W and a minimum DS breakdown voltage of 30V, this transistor is designed to deliver exceptional results. Upgrade your designs today with the SCH1434TL and experience the quality and value that Onsemi provides in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have faster switching speeds and higher efficiency compared to P-Channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse voltage spikes, making it ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in electronic circuits.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, saving space and facilitating automated assembly.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle voltage spikes without damaging the components.

Package Shape: RECTANGULAR

The rectangular shape is compact and space-efficient, making it suitable for small electronic devices.

Terminal Form: FLAT

The flat terminal form ensures secure and stable connections within the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors provide better control over the flow of current, allowing for precise switching.

No. of Terminals: 6

Six terminals provide flexibility in circuit design and connections, allowing for more complex applications.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8 W, this transistor can handle higher power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in field effect transistors.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency in electronic components.

Maximum Drain Current (ID): 2 A

With a maximum drain current of 2 A, this transistor can handle higher current loads for improved performance.

Maximum Drain-Source On Resistance: 0.165 ohm

The low drain-source on resistance ensures efficient power delivery and minimal power loss during operation.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options in electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) SCH1434TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.165 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SCH1434TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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