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SCH1406

Onsemi

SCH1406 by Onsemi

SCH1406 by Onsemi is a N-CHANNEL FET with 1.7A max drain current and 0.8W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, it's a single configuration SMD component suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,633 parts In-Stock

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Vyrian

USA . 1,612 parts In-Stock

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Kulean Microsystems

USA . 7,263 parts In-Stock

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7,263

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Problanco Electronics

Mexico . 6,858 parts In-Stock

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TANS Electronics

Latvia . 5,594 parts In-Stock

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SupplyDigital Components

Austria . 4,971 parts In-Stock

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Corphita

USA . 2,328 parts In-Stock

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UHIMA Technologies

Türkiye . 621 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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Overview

Unleash the power of innovation with the SCH1406 by Onsemi. Crafted with precision and quality in mind, this small signal field effect transistor is designed to deliver exceptional performance in a variety of applications. From amplifiers to power management systems, this N-CHANNEL FET offers reliability, efficiency, and versatility like no other. Trust in Onsemi's renowned expertise and experience in semiconductor technology to bring you a product that exceeds expectations. Elevate your projects with the SCH1406 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are commonly used in low power applications and have high input impedance, making them a good choice for small signal amplification.

Configuration: SINGLE

Having a single configuration simplifies the circuit design and makes it easier to integrate this transistor into a circuit.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB designs, saving space and enabling higher component density.

Maximum Drain Current (Abs) (ID): 1.7 A

With a maximum drain current of 1.7 A, this transistor can handle moderate current loads, suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.8 W

The low power dissipation of 0.8 W ensures that the transistor operates efficiently and does not overheat during operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as low noise, high input impedance, and ease of fabrication.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150 °C ensures that the transistor can withstand high temperature environments without performance degradation.

Technical Specifications

Small Signal Field Effect Transistors (FET) SCH1406 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Trade Compliance

SCH1406 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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