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SCH1433-TL-H

Onsemi

SCH1433-TL-H by Onsemi

SCH1433-TL-H by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A ID, and 0.064 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it has a max temp of 150 °C and comes in a SMALL OUTLINE package with TIN BISMUTH finish.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,000 parts In-Stock

1+ parts

$1.770

100+ parts

$0.359

1k+ parts

$0.207

10k+ parts

-

5,000

$1.770

$0.359

$0.207

-

Rochester

USA . 594,000 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

594,000

-

$0.159

$0.132

$0.117

DigiKey

USA . 594,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.200

594,000

-

-

-

$0.200

Verical

USA . 340,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.147

340,000

-

-

-

$0.147

Distributors (In-Stock)

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Digiode

USA . 2,213 parts In-Stock

1+ parts

$0.124

100+ parts

-

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2,213

$0.124

-

-

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Vyrian

USA . 177 parts In-Stock

1+ parts

$0.130

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-

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177

$0.130

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Chip Stock

USA . 43,000 parts In-Stock

1+ parts

-

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43,000

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ACDS - Activité Composants Distribution Service

France . 4,799 parts In-Stock

1+ parts

-

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4,799

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Bristol Electronics

USA . 4,799 parts In-Stock

1+ parts

-

100+ parts

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4,799

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Dan-Mar Components

USA . 4,799 parts In-Stock

1+ parts

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4,799

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Distributors (Availability)

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Corphita

USA . 1,128 parts In-Stock

1+ parts

$0.117

100+ parts

-

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1,128

$0.117

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Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.130

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76

$0.130

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Continental Prestige Electronics

USA . 594,000 parts In-Stock

1+ parts

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100+ parts

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$0.119

10k+ parts

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594,000

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$0.119

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Kepictronics

USA . 94,000 parts In-Stock

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94,000

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Metaverse IC Inc.

Canada . 94,000 parts In-Stock

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Perfect Parts

USA . 85,149 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,264 parts In-Stock

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29,264

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Authorized Procurement Solutions

USA . 11,992 parts In-Stock

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GreenTree Electronics

Israel . 11,992 parts In-Stock

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11,992

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TANS Electronics

Latvia . 8,356 parts In-Stock

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8,356

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SupplyDigital Components

Austria . 6,580 parts In-Stock

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6,580

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Kulean Microsystems

USA . 4,757 parts In-Stock

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4,757

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Assy Fe

Spain . 1,950 parts In-Stock

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Problanco Electronics

Mexico . 691 parts In-Stock

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691

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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505

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Overview

Discover the power of the SCH1433-TL-H by Onsemi, a top-quality N-channel field effect transistor with a built-in diode. Perfect for switching applications, this small outline package offers a maximum drain current of 3.5 A and a low on-resistance. With Onsemi's expertise in semiconductor technology, you can trust in the reliability and performance of this enhancement mode transistor. Upgrade your electronic projects with the SCH1433-TL-H and experience the benefits of efficiency and precision in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by including a diode in the transistor.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring reliable performance.

Surface Mount: YES

Easy to install and suitable for surface mounting on PCBs.

Minimum DS Breakdown Voltage: 20 V

Provides a safety margin for voltage spikes and fluctuations.

Package Shape: RECTANGULAR

Offers compatibility with standard packaging and mounting methods.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high-speed switching and low power consumption.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, suitable for various industrial applications.

Maximum Drain-Source On Resistance: 0.064 ohm

Offers low on-resistance for efficient power handling.

Technical Specifications

Small Signal Field Effect Transistors (FET) SCH1433-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.064 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SCH1433-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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