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SCH1332TL

Onsemi

SCH1332TL by Onsemi

SCH1332TL by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 2.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.095 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 6 terminals in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,134 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,809 parts In-Stock

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TANS Electronics

Latvia . 6,973 parts In-Stock

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Problanco Electronics

Mexico . 5,498 parts In-Stock

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Corphita

USA . 2,070 parts In-Stock

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Kulean Microsystems

USA . 1,984 parts In-Stock

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Corohmni

South Africa . 433 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SCH1332TL by Onsemi. This small signal field effect transistor offers unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for switching applications, this P-channel transistor provides seamless performance with its built-in diode and enhancement mode operation. Experience the benefits of a maximum drain current of 2.5 A and a low on-resistance of 0.095 ohm. Take your projects to the next level with the SCH1332TL - the perfect solution for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching performance and low power consumption.

Configuration: SINGLE WITH BUILT-IN DIODE

Saves space on the circuit board and simplifies the design with the inclusion of a built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on a circuit board, saving assembly time and providing a compact design.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltages, making it versatile for different applications.

Package Shape: RECTANGULAR

Provides easy integration into circuit board designs and efficient use of space.

Terminal Form: FLAT

Allows for easy soldering onto the circuit board, ensuring a secure connection.

Operating Mode: ENHANCEMENT MODE

Offers enhanced performance in terms of efficiency and speed during operation.

No. of Terminals: 6

Provides multiple connection points for versatile circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

Compact design allows for space-saving on the circuit board and easy integration into various electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Highly reliable technology known for its stable performance and efficiency.

Transistor Element Material: SILICON

Silicon material offers high temperature tolerance and reliable performance in various operating conditions.

Maximum Drain Current (ID): 2.5 A

With a maximum drain current of 2.5 A, this transistor can handle higher loads, making it suitable for a range of applications.

Maximum Drain-Source On Resistance: 0.095 ohm

Low on-resistance minimizes power losses and heat generation, ensuring efficient operation.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and connections, allowing for customized configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) SCH1332TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SCH1332TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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