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NVF2201NT1G

Onsemi

NVF2201NT1G by Onsemi

NVF2201NT1G by Onsemi is a N-CHANNEL FET with 0.3A max drain current and 0.15W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 69,000 parts In-Stock

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Vyrian

USA . 7,367 parts In-Stock

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Digiode

USA . 180 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.833

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$0.758

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$0.683

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500

$0.833

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AZTECH Wire

Italy . 875 parts In-Stock

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$20.960

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 22,244 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 5,583 parts In-Stock

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Problanco Electronics

Mexico . 3,384 parts In-Stock

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Corphita

USA . 1,547 parts In-Stock

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TANS Electronics

Latvia . 943 parts In-Stock

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SupplyDigital Components

Austria . 890 parts In-Stock

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UHIMA Technologies

Türkiye . 466 parts In-Stock

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Kulean Microsystems

USA . 377 parts In-Stock

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South Africa . 201 parts In-Stock

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Overview

Enhance your electronic designs with the NVF2201NT1G by Onsemi, a top-quality N-CHANNEL Small Signal Field Effect Transistor. Manufactured by Onsemi, a trusted industry leader, this FET offers reliable performance and versatility for a variety of applications. With a maximum drain current of 0.3A and maximum power dissipation of 0.15W, this surface mount transistor is perfect for compact electronic devices. Upgrade your projects with the innovative technology and high efficiency of the NVF2201NT1G.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used for switching and amplification applications, making this product versatile and suitable for a variety of uses.

Configuration: SINGLE

The single configuration simplifies the design and makes it easier to integrate into circuits, saving space and reducing complexity.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, making this product suitable for modern manufacturing processes.

Maximum Drain Current (Abs) (ID): 0.3 A

With a maximum drain current of 0.3 A, this FET can handle moderate power requirements, suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation of 0.15 W ensures efficient operation and helps prevent overheating, contributing to the reliability of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this FET a dependable choice for various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand higher temperatures, allowing for reliable operation in different environments.

Terminal Finish: TIN

The TIN terminal finish provides good conductivity and solderability, ensuring secure connections and longevity of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand peak reflow temperatures for up to 30 seconds allows for easy and reliable assembly during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures robust solder joints and resistance to thermal stress, enhancing the durability of the product.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVF2201NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.3 A

Maximum Drain Current (ID):

.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVF2201NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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