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IPD90P04P405ATMA1

Infineon Technologies

IPD90P04P405ATMA1 by Infineon Technologies

IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.

Median Price

$1.640

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 38 parts In-Stock

1+ parts

$1.640

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38

$1.640

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Vyrian

USA . 6,798 parts In-Stock

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6,798

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Chip Stock

USA . 722 parts In-Stock

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722

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Digiode

USA . 169 parts In-Stock

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169

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Pegasus Components GmbH

Germany . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,619 parts In-Stock

1+ parts

$1.260

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1,619

$1.260

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Argo Parts USA

USA . 3,504 parts In-Stock

1+ parts

$1.489

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3,504

$1.489

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Continental Prestige Electronics

USA . 3,011 parts In-Stock

1+ parts

$1.489

100+ parts

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10k+ parts

$1.459

3,011

$1.489

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$1.459

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.640

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2,000

$1.640

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Modulus Dynamics

Lithuania . 3,313 parts In-Stock

1+ parts

$1.735

100+ parts

$1.666

1k+ parts

$1.596

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3,313

$1.735

$1.666

$1.596

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Corohmni

South Africa . 58 parts In-Stock

1+ parts

$1.735

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58

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.787

100+ parts

$1.698

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$1.698

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3,000

$1.787

$1.698

$1.698

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Ampacity Inc.

Singapore . 1,284 parts In-Stock

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$8.050

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1,284

$8.050

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Microchip USA

USA . 5,061 parts In-Stock

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$8.648

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5,061

$8.648

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AZTECH Wire

Italy . 510 parts In-Stock

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$18.783

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510

$18.783

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Semicontronic

India . 771 parts In-Stock

1+ parts

$50.050

100+ parts

$48.799

1k+ parts

$48.548

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771

$50.050

$48.799

$48.548

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Perfect Parts

USA . 8,400 parts In-Stock

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8,400

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Robosynatics

Brazil . 3,041 parts In-Stock

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3,041

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Lucentia Tech

USA . 3,041 parts In-Stock

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$1.700

1k+ parts

$1.666

10k+ parts

$1.666

3,041

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$1.700

$1.666

$1.666

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Corphita

USA . 55 parts In-Stock

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55

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Overview

Discover the power and efficiency of the IPD90P04P405ATMA1 by Infineon Technologies, a top-tier manufacturer known for quality and innovation. This P-Channel Power Field Effect Transistor with a built-in diode offers unparalleled performance in a wide range of applications. Experience the benefits of enhanced mode operation, high drain current capability, and low on-resistance. Trust in Infineon's expertise and elevate your power management solutions with this reliable and high-quality component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components of the Power FET, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL configuration allows for efficient current flow and control, making this Power FET ideal for power management applications.

Surface Mount: YES

Being surface mountable makes installation and replacement of the Power FET easier and reduces the need for additional components in the circuit.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this Power FET can handle high voltage applications, providing reliable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the FET's conductivity, enabling efficient power management in various electronic devices.

Maximum Pulsed Drain Current (IDM): 360 A

High pulsed drain current capability of 360A ensures the Power FET can handle sudden current surges without damage, making it a reliable choice for demanding applications.

Avalanche Energy Rating (EAS): 60 mJ

The Avalanche Energy Rating of 60mJ indicates the Power FET's ability to withstand energy spikes, ensuring long-term reliability and stability in operation.

No. of Terminals: 2

Having only 2 terminals simplifies the circuitry design and reduces the overall complexity of the system, making it easier to integrate the FET into various electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high electrical efficiency and low power consumption, making this Power FET suitable for energy-efficient applications.

Maximum Drain-Source On Resistance: 0.0047 ohm

Low drain-source on resistance of 0.0047 ohm minimizes power loss and heat generation, ensuring efficient operation and extending the lifespan of the Power FET.

Technical Specifications

Power Field Effect Transistors (FET) IPD90P04P405ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

60 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

90 A

Maximum Drain-Source On Resistance:

.0047 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

360 A

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

IPD90P04P405ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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