Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IPD90N06S405ATMA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.0051 ohm Drain-Source On Resistance. It has a max IDM of 360A, EAS of 135mJ, and operates in Enhancement Mode. Widely used in automotive applications due to AEC-Q101 standard compliance and high drain current capacity of 90A.
Median Price
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QUARKTWIN TECHNOLOGY LTD
Perfect Parts
Authorized Procurement Solutions
Provides durability and protection for the internal components, making the product reliable in various operating conditions.
N-channel FETs generally offer better performance and efficiency compared to P-channel FETs, making this product a suitable choice for high-performance applications.
The built-in diode helps in handling reverse current flow, offering added protection to the circuit and enhancing its overall functionality.
Allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.
With a high breakdown voltage, this FET can handle higher voltages without breakdown, ensuring robust performance in high-voltage applications.
The rectangular shape allows for efficient use of PCB space and easy integration into compact electronic designs.
The gull wing terminals provide strong mechanical support and easy soldering, improving the overall reliability of the product in demanding environments.
Enhancement mode FETs offer better control over the switching behavior, making this product suitable for applications requiring precise switching.
High pulsed drain current rating allows for handling sudden spikes in current, making this FET ideal for applications with varying load conditions.
With a high avalanche energy rating, this FET can withstand voltage spikes and prevent damage to the circuit, ensuring reliable operation under transient conditions.
The two terminals simplify the connection process and reduce the chances of wiring errors, resulting in a more straightforward installation.
The small outline package style saves space on the PCB, enabling compact and portable electronic designs.
Metal-oxide semiconductor technology offers high performance and efficiency, making this FET a reliable choice for various power applications.
Silicon-based transistors provide excellent thermal conductivity and performance, ensuring stable operation even in high-temperature conditions.
The wide operating temperature range allows the FET to function correctly in extreme environments, increasing its versatility for different applications.
Tin terminal finish offers good conductivity and solderability, ensuring a reliable electrical connection for optimal performance.
High maximum drain current rating allows the FET to handle large current loads, making it suitable for high-power applications.
Low drain-source on resistance minimizes power loss and heat generation, improving the efficiency and performance of the FET.
Single terminal position simplifies the installation process and reduces wiring complexity, ensuring ease of use and reliability.
Drain connection simplifies the circuit layout and reduces the number of external components required for proper operation, enhancing the overall reliability and efficiency of the product.
Compliance with the AEC-Q101 automotive standard ensures that the FET meets stringent quality and reliability requirements, making it suitable for automotive applications.
Power Field Effect Transistors (FET) IPD90N06S405ATMA2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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IPD90N06S405ATMA2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Wafer Fab 12/Feb/2019
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LIS2DH12TR
STMicroelectronics
LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
BAV99
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Comchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
Plessey Semiconductors Discrete Components Div
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
DS18B20
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
MBRS140T3G
Onsemi
MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.
IRF640SPBF
Vishay Intertechnology's IRF640SPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 130W.
IRF9530PBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 12 A;
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
SIS862DN-T1-GE3
Vishay Intertechnology's SIS862DN-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 40A max drain current, and 0.0085 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
BSS138BKS,115
NXP Semiconductors' BSS138BKS,115 is an N-CHANNEL Power FET with 0.32A max drain current and 0.99W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C.
IRFP460PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
BSC060N10NS3GATMA1
Infineon Technologies
BSC060N10NS3GATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.006 ohm Drain-Source Resistance, and 360A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for high-power systems requiring efficient power management in compact designs.
BSL302SNH6327XTSA1
Infineon Technologies' BSL302SNH6327XTSA1 is a N-CHANNEL Power FET with a min DS Breakdown Voltage of 30V. It has a max Pulsed Drain Current of 28A and an Avalanche Energy Rating of 30mJ. This FET is commonly used in applications requiring high power and efficient switching capabilities.
BSP230,135
NXP Semiconductors' BSP230,135 is a P-CHANNEL FET with 300V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 0.75A max pulsed drain current and 17 ohm max drain-source resistance, this MOSFET can handle various power requirements efficiently.
AUIRF5210STRL
AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
CSD18563Q5A
Texas Instruments
CSD18563Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 96A IDM, and 0.0108 ohm RDS(on). With a max power dissipation of 116W, it operates in temperatures ranging from -55 to 150 °C.
AUIRF3205Z
AUIRF3205Z by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0065 ohm RDS(on), and 170W Pdiss. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and EAS of 250mJ.
IRLML0040TRPBF
Infineon's IRLML0040TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 3.6A ID, and 0.056 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it offers high performance in compact designs.
G3R450MT17J
Genesic Semiconductor
G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
BSP297H6327XTSA1
Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
IRF530NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 60 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
FDD4685
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
NDS7002A_NB9GGTXA
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
IRFR6215TRPBF
Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
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IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
IPD90P04P405ATMA1
IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
IPD90P03P4L04ATMA1
IPD90P03P4L04ATMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 360A IDM, and 0.0068 ohm RDS(on). It's used for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capabilities and low on-resistance.
IPD90P04P405AUMA1
IPD90P04P405AUMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(on). Ideal for power applications due to its 60 mJ EAS rating and SINGLE configuration with BUILT-IN DIODE. Suitable for surface mount designs in various electronic systems.
IPD90P04P4-05
Infineon's IPD90P04P4-05 is a P-channel FET with 40V DS breakdown voltage, 360A IDM, and 0.0047 ohm RDS(on). Ideal for power applications requiring high drain current handling in a compact package.
IPD90R1K2C3ATMA1
IPD90R1K2C3ATMA1 by Infineon is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 10A IDM, 68mJ EAS, and 1.2 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, AEC-Q101 compliant.
IPD90N03S4L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 85 mJ;
IPD95R450P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
IPD90R1K2C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: 1.2 ohm; Avalanche Energy Rating (EAS): 68 mJ;
IPD90P04P405ATMA2
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
IPD90P03P404ATMA1
Infineon's IPD90P03P404ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 0.0045 ohm RDS(ON). Ideal for automotive applications, it features 360A IDM, 370mJ EAS, and AEC-Q101 compliance. The MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals for surface mount assembly.
IPD95R2K0P7ATMA1
IPD95R2K0P7ATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 950V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 6mJ EAS, this MOSFET operates in enhancement mode at temperatures ranging from -55 to 150°C.
IPD90N06S407ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 90 A;
IPD90N06S4L06ATMA2
IPD90N06S4L06ATMA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0063 ohm RDS(ON), and 360A IDM. It's used in power applications due to its 67mJ EAS rating, AEC-Q101 standard compliance, and built-in diode configuration.
IPD90N10S4L06ATMA1
IPD90N10S4L06ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 360A IDM. Ideal for power applications, it has a max power dissipation of 136W, operating from -55 to 175 °C. Suitable for automotive use due to AEC-Q101 standard compliance.
IPD90N06S404ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING; Minimum Operating Temperature: -55 Cel;
IPD90N03S4L02ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
IPD90N04S4-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
IPD90N04S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Drain Current (ID): 90 A; Maximum Drain Current (Abs) (ID): 90 A;
Supply Digital Components
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Total price ≈ $80,197.29
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