Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Infineon's IPD90N06S404ATMA2 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 360A IDM, and 0.0038 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
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Farnell
$1.380
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Element14
$2.580
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Mouser Electronics
$2.940
$1.330
$1.060
Newark
$3.100
$1.390
$1.110
$1.040
DigiKey
$3.260
$1.463
$1.184
Rochester
$1.270
$1.050
$0.940
Verical
$1.089
$0.971
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$1.771
Arrow
$0.929
Digiode
$0.578
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Vyrian
Rutronik
$0.900
IBS Electronics
$1.170
Nova Conductors
Ampacity Inc.
$0.520
Semicontronic
$0.507
$0.504
Corphita
$0.547
Component Stockers USA
$1.010
$0.950
$0.780
Modulus Dynamics
$1.394
$1.338
$1.282
Corohmni
Aztec Data Supply Inc.
$1.454
Continental Prestige Electronics
$1.730
$1.260
$0.856
Microchip USA
$6.833
Glotronic Ltd.
Authorized Procurement Solutions
Allen Electronics Distributors
$1.669
Argo Parts USA
Perfect Parts
GreenTree Electronics
Aranea Global
Eastek
The use of plastic/epoxy material makes the package of this FET durable and resistant to external environmental factors, ensuring long-term reliability.
N-Channel FETs typically have lower on-resistance and higher efficiency compared to P-Channel FETs, making them a preferred choice for many power applications.
Having a built-in diode simplifies circuit design and protects the FET from reverse currents, enhancing overall system efficiency and reliability.
Being surface mount compatible allows for easier and more efficient PCB assembly, saving space and reducing manufacturing costs.
The high minimum breakdown voltage ensures reliable operation in high voltage applications, making this FET suitable for a wide range of power circuits.
The high avalanche energy rating indicates that this FET can handle transient power spikes without failure, making it suitable for rugged industrial applications.
With a high maximum drain current rating, this FET can handle large currents without overheating, providing efficient power management in demanding situations.
Power Field Effect Transistors (FET) IPD90N06S404ATMA2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
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Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
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Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
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IPD90N06S404ATMA2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Wafer Fab 12/Feb/2019
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148
New Jersey Semiconductor Products
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Eic Semiconductor
BAV99
Toshiba
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931AZ-5.0RPG
Onsemi
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
STM32H753IIK6
STMicroelectronics
STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.
MBRS130LT3G
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
General Instrument
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
Pro-an Electronic
ECS-.327-12.5-17X-TR
Ecs International
ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.
STM32H753ZIT6
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
Taiwan Semiconductor
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
BSC067N06LS3GXT
BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
AOD4185
Alpha & Omega Semiconductor
AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
RFD14N05LSM9A
RFD14N05LSM9A by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 14A Drain Current, and 0.1 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at up to 175°C, it features GULL WING terminals in a RECTANGULAR package.
IRFB4110PBF
IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
IRF7303TRPBF
IRF7303TRPBF by Infineon is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It has a Max Drain Current of 4.9A, Min DS Breakdown Voltage of 30V, and Max Pulsed Drain Current of 20A. This small outline package with GULL WING terminals operates in ENHANCEMENT MODE for efficient power management.
FDPF10N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
G2R1000MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
SISS71DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
SIA456DJ-T1-GE3
Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
CSD18543Q3A
Texas Instruments
CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
IRF7413ZTRPBF
Infineon's IRF7413ZTRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 100A IDM, 32mJ EAS, and 0.01 ohm RDS(on). With a max temp of 150°C, this MOSFET in GULL WING package is designed for high-power ENHANCEMENT MODE operations.
ZVN2110GTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
SPW47N60C3
SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
IRF7103TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FDMS86101
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Minimum DS Breakdown Voltage: 100 V; Terminal Position: DUAL;
NDT452AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
BS170
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
IRF9530
Samsung
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
NDT2955
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
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IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
IPD90P04P405ATMA1
IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
IPD90P03P4L04ATMA1
IPD90P03P4L04ATMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 360A IDM, and 0.0068 ohm RDS(on). It's used for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capabilities and low on-resistance.
IPD90P04P405AUMA1
IPD90P04P405AUMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(on). Ideal for power applications due to its 60 mJ EAS rating and SINGLE configuration with BUILT-IN DIODE. Suitable for surface mount designs in various electronic systems.
IPD90P04P4-05
Infineon's IPD90P04P4-05 is a P-channel FET with 40V DS breakdown voltage, 360A IDM, and 0.0047 ohm RDS(on). Ideal for power applications requiring high drain current handling in a compact package.
IPD90R1K2C3ATMA1
IPD90R1K2C3ATMA1 by Infineon is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 10A IDM, 68mJ EAS, and 1.2 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, AEC-Q101 compliant.
IPD90N06S405ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Package Shape: RECTANGULAR; Case Connection: DRAIN;
IPD90N03S4L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 85 mJ;
IPD95R450P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
IPD90R1K2C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: 1.2 ohm; Avalanche Energy Rating (EAS): 68 mJ;
IPD90P04P405ATMA2
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
IPD90P03P404ATMA1
Infineon's IPD90P03P404ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 0.0045 ohm RDS(ON). Ideal for automotive applications, it features 360A IDM, 370mJ EAS, and AEC-Q101 compliance. The MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals for surface mount assembly.
IPD95R2K0P7ATMA1
IPD95R2K0P7ATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 950V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 6mJ EAS, this MOSFET operates in enhancement mode at temperatures ranging from -55 to 150°C.
IPD90N06S407ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 90 A;
IPD90N06S4L06ATMA2
IPD90N06S4L06ATMA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0063 ohm RDS(ON), and 360A IDM. It's used in power applications due to its 67mJ EAS rating, AEC-Q101 standard compliance, and built-in diode configuration.
IPD90N10S4L06ATMA1
IPD90N10S4L06ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 360A IDM. Ideal for power applications, it has a max power dissipation of 136W, operating from -55 to 175 °C. Suitable for automotive use due to AEC-Q101 standard compliance.
IPD90N03S4L02ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
IPD90N04S4-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
IPD90N04S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Drain Current (ID): 90 A; Maximum Drain Current (Abs) (ID): 90 A;
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