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DMG2301L-7

Diodes Incorporated

DMG2301L-7 by Diodes Incorporated

DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.

Median Price

$0.133

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20,162 parts In-Stock

1+ parts

$0.310

100+ parts

$0.121

1k+ parts

$0.083

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-

20,162

$0.310

$0.121

$0.083

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DigiKey

USA . 7 parts In-Stock

1+ parts

$0.310

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$0.120

1k+ parts

$0.078

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7

$0.310

$0.120

$0.078

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Newark

USA . 9,773 parts In-Stock

1+ parts

$0.319

100+ parts

$0.124

1k+ parts

$0.080

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9,773

$0.319

$0.124

$0.080

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Verical

USA . 393,000 parts In-Stock

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$0.056

393,000

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$0.056

Arrow

USA . 303,000 parts In-Stock

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$0.031

303,000

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$0.031

Farnell

UK . 15,914 parts In-Stock

1+ parts

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$0.088

1k+ parts

$0.065

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$0.057

15,914

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$0.088

$0.065

$0.057

Element14

Singapore . 8,250 parts In-Stock

1+ parts

-

100+ parts

$0.133

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$0.092

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$0.091

8,250

-

$0.133

$0.092

$0.091

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.094

100+ parts

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50

$0.094

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IBS Electronics

USA . 1,290,000 parts In-Stock

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$0.102

1,290,000

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$0.102

NAC Semi

USA . 882,000 parts In-Stock

1+ parts

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$0.053

882,000

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$0.053

Vyrian

USA . 212,171 parts In-Stock

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Chip Stock

USA . 170,240 parts In-Stock

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Semtec, LLC

USA . 114,000 parts In-Stock

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114,000

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Component Sense

UK . 49,887 parts In-Stock

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49,887

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Micros

Poland . 25,300 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.079

10k+ parts

$0.073

25,300

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-

$0.079

$0.073

Partservice

France . 24,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.080

10k+ parts

$0.062

24,000

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$0.080

$0.062

Micros sp.j. W. Kędra i J. Lic

Poland . 24,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.086

10k+ parts

$0.067

24,000

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$0.086

$0.067

Bristol Electronics

USA . 9,749 parts In-Stock

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9,749

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Atlantic Semiconductor

USA . 4,994 parts In-Stock

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4,994

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Cyclops Electronics Ltd

UK . 1,836 parts In-Stock

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1,836

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Distributors (Availability)

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Decca Corp

Germany . 113,827 parts In-Stock

1+ parts

$0.024

100+ parts

$0.024

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$0.023

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113,827

$0.024

$0.024

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Semicontronic

India . 113,735 parts In-Stock

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$0.024

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$0.023

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$0.023

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113,735

$0.024

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$0.023

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Ampacity Inc.

Singapore . 212,109 parts In-Stock

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$0.025

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$0.025

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Argo Parts USA

USA . 4,075 parts In-Stock

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$0.094

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$0.092

4,075

$0.094

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$0.092

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.094

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$0.090

10k+ parts

$0.088

100

$0.094

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$0.090

$0.088

Continental Prestige Electronics

USA . 11,885 parts In-Stock

1+ parts

$0.299

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$0.120

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$0.052

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11,885

$0.299

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$0.052

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Modulus Dynamics

Lithuania . 3,580 parts In-Stock

1+ parts

$0.338

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$0.338

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$0.338

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3,580

$0.338

$0.338

$0.338

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Aztec Data Supply Inc.

USA . 4,396 parts In-Stock

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$0.800

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$0.800

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Corohmni

South Africa . 103 parts In-Stock

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$1.703

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103

$1.703

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Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$1.822

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$1.731

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$1.731

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700

$1.822

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$1.731

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GreenTree Electronics

Israel . 798,000 parts In-Stock

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Robosynatics

Brazil . 25,586 parts In-Stock

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Lucentia Tech

USA . 25,586 parts In-Stock

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$1.865

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$1.827

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$1.827

25,586

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$1.827

$1.827

Kepictronics

USA . 24,275 parts In-Stock

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Perfect Parts

USA . 7,940 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Infinite Electronics LLP (Excess)

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S.R.D Solutions

India . 3,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,559 parts In-Stock

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1,559

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Lixinc

USA . 594 parts In-Stock

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594

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Overview

Unlock the power of innovation with the DMG2301L-7 by Diodes Incorporated. Designed with top-notch quality and expertise, this P-CHANNEL Power Field Effect Transistor offers exceptional performance in switching applications. With a single configuration and built-in diode, this transistor provides unparalleled value and benefits to customers looking for reliability and efficiency. Trust Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Experience the advantages of the DMG2301L-7 and revolutionize your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, making it suitable for various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are commonly used in high-speed switching applications, making this product ideal for efficient performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage, enhancing the overall reliability of the system.

Transistor Application: SWITCHING

Designed for switching applications, this FET ensures fast response times and efficient power management.

Surface Mount: YES

Surface mounting capability allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures and operate reliably in demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) DMG2301L-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

45 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG2301L-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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