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NX3008NBK,215

NXP Semiconductors

NX3008NBK,215 by NXP Semiconductors

NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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DigiKey

USA . 20,212 parts In-Stock

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$0.071

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Mouser Electronics

USA . 4,609 parts In-Stock

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4,609

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$0.089

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$0.043

Newark

USA . 14,139 parts In-Stock

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$0.166

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EBV Elektronik

Germany . 300,000 parts In-Stock

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Arrow

USA . 261,000 parts In-Stock

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Verical

USA . 261,000 parts In-Stock

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TTI

USA . 144,000 parts In-Stock

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RS (Exports)

UK . 55,950 parts In-Stock

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Avnet

USA . 42,000 parts In-Stock

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Farnell

UK . 24,862 parts In-Stock

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Rochester

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 6,000 parts In-Stock

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Nova Conductors

Japan . 87 parts In-Stock

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Maritex

Poland . 1 parts In-Stock

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Digiode

USA . 2,325 parts In-Stock

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TME

Poland . 4,106 parts In-Stock

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IBS Electronics

USA . 336,000 parts In-Stock

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Chip Stock

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NAC Semi

USA . 57,000 parts In-Stock

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Sensible Micro Corp

USA . 20,375 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

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Sea View Technologies

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Bristol Electronics

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ComSIT Distribution GmbH

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ComSIT USA

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LIBRA Elektronik GmbH

Germany . 1,369 parts In-Stock

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Anansix

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Semicontronic

India . 164,965 parts In-Stock

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AZTECH Wire

Italy . 11,221 parts In-Stock

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Argo Parts USA

USA . 4,281 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Corphita

USA . 3,517 parts In-Stock

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Continental Prestige Electronics

USA . 104,354 parts In-Stock

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$0.076

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Advanced Electronics

New Zealand . 4,430 parts In-Stock

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$0.778

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$0.708

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$0.638

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Modulus Dynamics

Lithuania . 14,831 parts In-Stock

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$0.875

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Aztec Data Supply Inc.

USA . 2,085 parts In-Stock

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$1.940

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Perfect Parts

USA . 3,516,229 parts In-Stock

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Glotronic Ltd.

UK . 235,200 parts In-Stock

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GreenTree Electronics

Israel . 228,000 parts In-Stock

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Kepictronics

USA . 162,899 parts In-Stock

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BidChips

USA . 117,635 parts In-Stock

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Allen Electronics Distributors

USA . 56,100 parts In-Stock

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Eastek

USA . 45,000 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

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Infinite Electronics LLP (Excess)

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Futuretech Components

Singapore . 9,500 parts In-Stock

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Lixinc

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RC Electronics

USA . 5,400 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,351 parts In-Stock

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UNI Independent Distributors

Spain . 4,009 parts In-Stock

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Supply Digital

USA . 1,525 parts In-Stock

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Formix International (Excess)

India . 1,417 parts In-Stock

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Corohmni

South Africa . 417 parts In-Stock

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Robosynatics

Brazil . 124 parts In-Stock

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Lucentia Tech

USA . 124 parts In-Stock

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$1.494

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$1.494

Overview

Unleash the power of cutting-edge technology with the NX3008NBK,215 by NXP Semiconductors. Crafted with precision and expertise, this N-CHANNEL Power FET offers unparalleled performance for a wide range of applications. With its state-of-the-art METAL-OXIDE SEMICONDUCTOR technology, this FET delivers reliable and efficient operation, making it the perfect choice for your electronic projects. Experience superior quality, efficiency, and durability with the NX3008NBK,215 - the ultimate solution for all your power transistor needs. Upgrade your devices today and discover the difference that NXP Semiconductors can make.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have lower on-state resistance and higher current-carrying capability compared to P-CHANNEL FETs, making them suitable for high power applications.

Surface Mount: YES

Surface mount FETs are easy to install and can be used in compact designs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.42 W

With a maximum power dissipation of 0.42 W, this FET can handle heat dissipation efficiently, ensuring reliable performance in high power applications.

Maximum Operating Temperature: 150 °C

The FET can operate at temperatures up to 150°C, making it suitable for applications where high temperature operation is required.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer high input impedance, low output impedance, and fast switching speeds, making them ideal for a wide range of power applications.

Technical Specifications

Power Field Effect Transistors (FET) NX3008NBK,215 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NX3008NBK,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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