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G3R450MT17J

Genesic Semiconductor

G3R450MT17J by Genesic Semiconductor

G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.

Median Price

$9.222

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TME

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Nova Conductors

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Overview

Discover the unparalleled performance and reliability of the G3R450MT17J Power Field Effect Transistor by Genesic Semiconductor. Known for their cutting-edge technology and superior quality, Genesic Semiconductor delivers top-tier products that exceed industry standards. Ideal for switching applications, this N-Channel FET offers a maximum pulsing drain current of 12A and an avalanche energy rating of 59mJ. With a minimum breakdown voltage of 1700V and a maximum power dissipation of 71W, this transistor is designed to optimize efficiency and durability. Elevate your projects with the G3R450MT17J, providing unmatched value and innovation in the field of semiconductor technology.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor.

Polarity or Channel Type:

N-CHANNEL - N-channel FETs have low on-resistance, making them efficient for switching applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design and improves efficiency.

Transistor Application:

SWITCHING - This FET is specifically designed for fast switching applications.

Surface Mount:

YES - Surface mounting allows for easy integration onto circuit boards.

Minimum DS Breakdown Voltage:

1700 V - This high breakdown voltage makes the transistor suitable for high voltage applications.

Package Shape:

RECTANGULAR - The rectangular shape allows for efficient use of space on the circuit board.

Terminal Form:

GULL WING - The gull wing terminals provide a secure connection during operation.

Operating Mode:

ENHANCEMENT MODE - Enhancement mode FETs offer better control over the switching process.

Maximum Pulsed Drain Current (IDM):

12 A - This high current rating allows for handling of sudden spikes in current.

Avalanche Energy Rating (EAS):

59 mJ - The high avalanche energy rating ensures reliable operation under extreme conditions.

No. of Terminals:

7 - The number of terminals meets the requirements of the application circuit.

Maximum Power Dissipation (Abs):

71 W - The high power dissipation rating allows for efficient heat dissipation.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space on the circuit board.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - MOSFET technology offers high switching speeds and low on-resistance.

Maximum Operating Temperature:

175 °C - The high operating temperature range ensures reliable performance in various environments.

Transistor Element Material:

SILICON CARBIDE - Silicon carbide offers high temperature tolerance and efficiency.

Minimum Operating Temperature:

55 °C - The low operating temperature range allows for use in cold environments.

Maximum Drain Current (ID):

8 A - This high drain current rating allows for handling of heavy loads.

Maximum Drain-Source On Resistance:

0.63 ohm - The low on-resistance ensures efficient power transfer.

Terminal Position:

SINGLE - The single terminal position simplifies installation and connection.

Case Connection:

DRAIN - The drain connection offers a secure connection point for the FET.

Maximum Feedback Capacitance (Crss):

1.5 pF - The low feedback capacitance minimizes signal distortion.

Reference Standard:

IEC-60747-8-4 - Compliance with this standard ensures quality and reliability in performance.

Technical Specifications

Power Field Effect Transistors (FET) G3R450MT17J attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Genesic Semiconductor

Specs

Avalanche Energy Rating (EAS):

59 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1700 V

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.63 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1.5 pF

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G7

No. of Elements:

1

No. of Terminals:

7

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

12 A

Reference Standard:

IEC-60747-8-4

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

G3R450MT17J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Genesic Semiconductor

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.

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