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NTP190N65S3HF

Onsemi

NTP190N65S3HF by Onsemi

NTP190N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, 50A IDM, and 0.019 ohm RDS(ON). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 162W. Suitable for high-power systems requiring efficient control and performance.

Median Price

$5.450

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,491 parts In-Stock

1+ parts

$3.970

100+ parts

$1.890

1k+ parts

$1.520

10k+ parts

-

1,491

$3.970

$1.890

$1.520

-

DigiKey

USA . 564 parts In-Stock

1+ parts

$5.450

100+ parts

$2.604

1k+ parts

$2.057

10k+ parts

-

564

$5.450

$2.604

$2.057

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Mouser Electronics

USA . 424 parts In-Stock

1+ parts

$5.450

100+ parts

$2.600

1k+ parts

$2.380

10k+ parts

-

424

$5.450

$2.600

$2.380

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Newark

USA . 1,491 parts In-Stock

1+ parts

$5.610

100+ parts

$2.680

1k+ parts

$2.220

10k+ parts

-

1,491

$5.610

$2.680

$2.220

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Element14

Singapore . 1,491 parts In-Stock

1+ parts

$7.240

100+ parts

$3.440

1k+ parts

$3.040

10k+ parts

-

1,491

$7.240

$3.440

$3.040

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Flip Electronics (Authorized)

USA . 66,400 parts In-Stock

1+ parts

-

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66,400

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Rochester

USA . 778 parts In-Stock

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778

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Verical

USA . 778 parts In-Stock

1+ parts

-

100+ parts

-

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$2.313

10k+ parts

$2.175

778

-

-

$2.313

$2.175

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,657 parts In-Stock

1+ parts

$2.071

100+ parts

-

1k+ parts

-

10k+ parts

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1,657

$2.071

-

-

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Vyrian

USA . 2,452 parts In-Stock

1+ parts

$2.180

100+ parts

-

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2,452

$2.180

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Flip Electronics

USA . 66,400 parts In-Stock

1+ parts

-

100+ parts

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66,400

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Chip Stock

USA . 525 parts In-Stock

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525

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,976 parts In-Stock

1+ parts

$0.881

100+ parts

-

1k+ parts

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10k+ parts

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2,976

$0.881

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Ampacity Inc.

Singapore . 8,800 parts In-Stock

1+ parts

$1.850

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8,800

$1.850

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Corphita

USA . 222 parts In-Stock

1+ parts

$1.962

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222

$1.962

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Corohmni

South Africa . 338 parts In-Stock

1+ parts

$2.180

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338

$2.180

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Microchip USA

USA . 8,471 parts In-Stock

1+ parts

$28.600

100+ parts

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8,471

$28.600

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TANS Electronics

Latvia . 7,990 parts In-Stock

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7,990

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Kulean Microsystems

USA . 4,469 parts In-Stock

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4,469

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Argo Parts USA

USA . 4,201 parts In-Stock

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4,201

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Continental Prestige Electronics

USA . 3,976 parts In-Stock

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3,976

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RC Electronics

USA . 3,200 parts In-Stock

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3,200

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Problanco Electronics

Mexico . 2,254 parts In-Stock

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2,254

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Aranea Global

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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299

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SupplyDigital Components

Austria . 113 parts In-Stock

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113

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Overview

Experience unparalleled power and efficiency with the Onsemi NTP190N65S3HF Power Field Effect Transistor. Crafted by a trusted manufacturer, this N-CHANNEL transistor offers reliability and performance in switching applications. Its enhanced mode operation and built-in diode make it an ideal choice for various industrial needs. With a high breakdown voltage of 650V and low on-resistance, this FET delivers optimal power dissipation and energy efficiency. Trust Onsemi to provide top-quality solutions for your electronic needs with the NTP190N65S3HF.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the power FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher current carrying capabilities compared to P-channel FETs, making them more efficient for power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient freewheeling and helps protect the circuit against reverse voltage spikes, enhancing the overall reliability of the power FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this power FET offers fast switching speeds and low on-resistance, making it ideal for power management and control.

Minimum DS Breakdown Voltage: 650 V

With a high minimum breakdown voltage, this power FET can handle high voltage levels, making it suitable for industrial and high-power applications.

Maximum Pulsed Drain Current (IDM): 50 A

The high maximum pulsed drain current allows for handling of large current spikes, ensuring reliable performance in high-demand applications.

Maximum Power Dissipation (Abs): 162 W

With a high maximum power dissipation rating, this power FET can effectively dissipate heat generated during operation, preventing overheating and ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for operation in harsh environments with elevated temperatures, ensuring stability and performance under extreme conditions.

Maximum Drain-Source On Resistance: 0.019 ohm

The low on-resistance of the power FET results in minimal power loss and higher efficiency, making it suitable for high-power applications where energy efficiency is critical.

Technical Specifications

Power Field Effect Transistors (FET) NTP190N65S3HF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

220 mJ

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.019 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

50 A

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTP190N65S3HF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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