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FQB34N20LTM

Onsemi

FQB34N20LTM by Onsemi

FQB34N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 640mJ and 0.08 ohm Drain-Source On Resistance.

Median Price

$2.399

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 741 parts In-Stock

1+ parts

$4.870

100+ parts

$2.280

1k+ parts

$1.850

10k+ parts

-

741

$4.870

$2.280

$1.850

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DigiKey

USA . 710 parts In-Stock

1+ parts

$4.870

100+ parts

$2.279

1k+ parts

-

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710

$4.870

$2.279

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Arrow

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.737

10k+ parts

$1.717

2,400

-

-

$1.737

$1.717

Verical

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.399

10k+ parts

-

2,400

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-

$2.399

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Chip1Stop

Japan . 800 parts In-Stock

1+ parts

-

100+ parts

-

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$1.540

10k+ parts

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800

-

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$1.540

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 63 parts In-Stock

1+ parts

$1.650

100+ parts

-

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63

$1.650

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DF Sales Co.

USA . 63 parts In-Stock

1+ parts

$1.650

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-

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63

$1.650

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IBS Electronics

USA . 4,800 parts In-Stock

1+ parts

$2.146

100+ parts

-

1k+ parts

$2.076

10k+ parts

$2.020

4,800

$2.146

-

$2.076

$2.020

Nova Conductors

Japan . 57 parts In-Stock

1+ parts

$2.351

100+ parts

-

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57

$2.351

-

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Digiode

USA . 871 parts In-Stock

1+ parts

$3.515

100+ parts

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871

$3.515

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Chip Stock

USA . 7,700 parts In-Stock

1+ parts

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7,700

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Vyrian

USA . 2,464 parts In-Stock

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2,464

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NAC Semi

USA . 800 parts In-Stock

1+ parts

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$3.530

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800

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$3.530

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LWI Electronics Inc

India . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.822

100+ parts

$0.748

1k+ parts

$0.674

10k+ parts

-

5,000

$0.822

$0.748

$0.674

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Aztec Data Supply Inc.

USA . 3,562 parts In-Stock

1+ parts

$1.023

100+ parts

-

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3,562

$1.023

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Modulus Dynamics

Lithuania . 18,257 parts In-Stock

1+ parts

$1.287

100+ parts

$1.287

1k+ parts

$1.287

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18,257

$1.287

$1.287

$1.287

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Semicontronic

India . 3,132 parts In-Stock

1+ parts

$1.310

100+ parts

$1.277

1k+ parts

$1.271

10k+ parts

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3,132

$1.310

$1.277

$1.271

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Ampacity Inc.

Singapore . 3,070 parts In-Stock

1+ parts

$1.310

100+ parts

-

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3,070

$1.310

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Corohmni

South Africa . 6 parts In-Stock

1+ parts

$1.398

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6

$1.398

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$2.351

100+ parts

$2.233

1k+ parts

$2.122

10k+ parts

$2.092

300

$2.351

$2.233

$2.122

$2.092

Continental Prestige Electronics

USA . 3,503 parts In-Stock

1+ parts

$2.351

100+ parts

-

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$2.304

3,503

$2.351

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-

$2.304

Argo Parts USA

USA . 684 parts In-Stock

1+ parts

$2.351

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684

$2.351

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Corphita

USA . 1,113 parts In-Stock

1+ parts

$3.330

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1,113

$3.330

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Microchip USA

USA . 8,273 parts In-Stock

1+ parts

$13.919

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8,273

$13.919

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Robosynatics

Brazil . 21,537 parts In-Stock

1+ parts

-

100+ parts

$0.478

1k+ parts

$0.468

10k+ parts

$0.468

21,537

-

$0.478

$0.468

$0.468

Lucentia Tech

USA . 21,537 parts In-Stock

1+ parts

-

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$0.478

1k+ parts

$0.468

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$0.468

21,537

-

$0.478

$0.468

$0.468

Perfect Parts

USA . 17,142 parts In-Stock

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SupplyDigital Components

Austria . 7,942 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,830 parts In-Stock

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6,830

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Alle Elektronik GmbH

Germany . 4,553 parts In-Stock

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4,553

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Problanco Electronics

Mexico . 2,819 parts In-Stock

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2,819

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Kulean Microsystems

USA . 1,496 parts In-Stock

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1,496

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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948

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Kepictronics

USA . 800 parts In-Stock

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800

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Supply Digital

USA . 741 parts In-Stock

1+ parts

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741

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iodParts Technologies Inc.

India . 175 parts In-Stock

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175

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TANS Electronics

Latvia . 61 parts In-Stock

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61

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Overview

Discover the high-quality FQB34N20LTM Power Field Effect Transistor by Onsemi, offering unmatched reliability and performance. This N-CHANNEL transistor with a built-in diode is perfect for switching applications. With a minimum DS Breakdown Voltage of 200V and maximum Drain Current of 31A, this transistor delivers exceptional power dissipation and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, this transistor's enhanced mode operation and fast turn-on/off times make it the ideal choice for your next project. Trust Onsemi for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the FET.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Minimum DS Breakdown Voltage: 200 V

Can handle high voltages, making it suitable for various applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high performance and efficiency in switching applications.

Maximum Pulsed Drain Current (IDM): 124 A

Capable of handling high current pulses, making it versatile in different scenarios.

Maximum Power Dissipation (Abs): 180 W

Can dissipate a high amount of power, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Drain Current (ID): 31 A

Ability to handle high continuous drain currents for sustained operation.

Maximum Drain-Source On Resistance: 0.08 ohm

Low ON resistance ensures efficient power transfer and minimal power loss.

Technical Specifications

Power Field Effect Transistors (FET) FQB34N20LTM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

640 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

31 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

67 pF

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

3.13 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

124 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1100 ns

Maximum Turn On Time (ton):

1150 ns

Trade Compliance

FQB34N20LTM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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