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FQB34P10TM

Onsemi

FQB34P10TM by Onsemi

FQB34P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 134A, EAS of 2200mJ, and ID of 33.5A. With a 0.06 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power electronics.

Median Price

$1.504

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Newark

USA . 2,400 parts In-Stock

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$1.430

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$1.430

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Farnell

UK . 2,174 parts In-Stock

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$3.280

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$1.560

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$1.300

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$3.280

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Mouser Electronics

USA . 10,064 parts In-Stock

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$4.200

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$1.940

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$1.520

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Element14

Singapore . 2,174 parts In-Stock

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$5.520

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$2.630

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$2.150

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$2.150

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DigiKey

USA . 13,767 parts In-Stock

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$1.406

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Arrow

USA . 6,400 parts In-Stock

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$1.315

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Verical

USA . 6,400 parts In-Stock

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$2.236

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EBV Elektronik

Germany . 2,400 parts In-Stock

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Chip1Stop

Japan . 2,400 parts In-Stock

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Rochester

USA . 800 parts In-Stock

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$1.330

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$1.190

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$1.120

800

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Nova Conductors

Japan . 10 parts In-Stock

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$1.785

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$1.785

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Digiode

USA . 2,831 parts In-Stock

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TME

Poland . 322 parts In-Stock

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$3.960

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$1.930

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$1.810

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322

$3.960

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$1.810

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IBS Electronics

USA . 30,400 parts In-Stock

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$2.034

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$1.992

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$1.992

Vyrian

USA . 5,585 parts In-Stock

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Chip Stock

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Bas Electronics GmbH & Co. KG

Germany . 1,788 parts In-Stock

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NAC Semi

USA . 800 parts In-Stock

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$3.290

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Bristol Electronics

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Inventory MP

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North Shore Components

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Prism Electronics

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Aztec Data Supply Inc.

USA . 1,154 parts In-Stock

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$0.984

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$0.984

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Ampacity Inc.

Singapore . 6,597 parts In-Stock

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$1.050

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$1.050

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Semicontronic

India . 6,248 parts In-Stock

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$1.050

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$1.024

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$1.018

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Corohmni

South Africa . 335 parts In-Stock

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$1.230

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Modulus Dynamics

Lithuania . 10,048 parts In-Stock

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$1.657

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$1.657

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$1.657

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$1.657

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Aranea Global

USA . 1,000 parts In-Stock

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$1.749

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$1.679

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$1.749

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$1.679

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Continental Prestige Electronics

USA . 1,934 parts In-Stock

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$1.785

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$1.749

1,934

$1.785

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$1.749

Argo Parts USA

USA . 1,891 parts In-Stock

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$1.785

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$2.351

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$2.139

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$1.928

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$2.351

$2.139

$1.928

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Corphita

USA . 2,325 parts In-Stock

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$3.132

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Andel Nordic

Denmark . 1,000 parts In-Stock

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$7.803

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$7.490

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$7.490

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$7.490

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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RC Electronics

USA . 47,535 parts In-Stock

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$1.600

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$1.460

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$1.410

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$1.410

Perfect Parts

USA . 37,878 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

USA . 16,282 parts In-Stock

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TANS Electronics

Latvia . 7,438 parts In-Stock

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Microchip USA

USA . 7,278 parts In-Stock

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SupplyDigital Components

Austria . 5,916 parts In-Stock

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Problanco Electronics

Mexico . 5,427 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Futuretech Components

Singapore . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,183 parts In-Stock

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Assy Fe

Spain . 1,653 parts In-Stock

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Benley Electronics

USA . 605 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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Supply Digital

USA . 198 parts In-Stock

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iodParts Technologies Inc.

India . 176 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 90 parts In-Stock

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Overview

Experience the power of innovation with the FQB34P10TM by Onsemi. Crafted with precision and expertise, this Power Field Effect Transistor offers unparalleled performance in switching applications. With a maximum operating temperature of 175°C and a minimum DS breakdown voltage of 100V, this P-CHANNEL transistor is designed to deliver reliable and efficient results. Its single configuration with built-in diode ensures seamless integration, while its high-quality construction guarantees long-lasting durability. Unlock the potential of your projects with the FQB34P10TM and elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the FET, making it suitable for various applications and environments.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL FETs are commonly used in power switching applications, offering low on-resistance and high current-carrying capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse voltage protection and improved efficiency in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control power flow in various electronic circuits.

Surface Mount: YES

Being surface mountable makes installation of this FET easier and allows for more compact designs in electronic circuits.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage of 100V ensures reliable operation and protection against voltage surges in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard form factor that is easy to handle and integrate into circuit designs.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering and allows for secure connections in surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and offer lower power consumption in switching applications.

Maximum Pulsed Drain Current (IDM): 134 A

With a high pulsed drain current rating of 134A, this FET can handle peak current demands in demanding applications.

Avalanche Energy Rating (EAS): 2200 mJ

The high avalanche energy rating of 2200mJ indicates the FET's ability to handle voltage spikes and protect the circuit from damage.

Maximum Drain Current (Abs) (ID): 33.5 A

The high maximum drain current rating of 33.5A ensures the FET can handle continuous current flow without overheating.

No. of Terminals: 2

Having only 2 terminals simplifies the FET's connections and integration into circuit designs.

Maximum Power Dissipation (Abs): 155 W

The high power dissipation rating of 155W indicates the FET's ability to handle power loads without getting damaged.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space in circuit designs and allows for more compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance, low on-resistance, and efficient operation of the FET.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature rating of 175°C allows the FET to operate reliably in high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability, making the FET suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and ensures reliable electrical connections for the FET.

Maximum Drain Current (ID): 33.5 A

The high maximum drain current rating of 33.5A allows the FET to handle high current loads without overheating.

Maximum Drain-Source On Resistance: 0.06 ohm

The low drain-source on-resistance of 0.06ohm ensures efficient power flow and minimal voltage drop across the FET.

Terminal Position: SINGLE

Having a single terminal position simplifies the FET's connections and allows for easier integration into circuit layouts.

Case Connection: DRAIN

The drain case connection simplifies the FET's circuit layout and provides efficient power flow in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering of the FET without damaging its internal components.

Peak Reflow Temperature °C: 245

The high peak reflow temperature of 245°C allows for reliable and robust soldering of the FET onto circuit boards.

Technical Specifications

Power Field Effect Transistors (FET) FQB34P10TM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

2200 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

33.5 A

Maximum Drain Current (ID):

33.5 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

134 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQB34P10TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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