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IPT015N10N5ATMA1

Infineon Technologies

IPT015N10N5ATMA1 by Infineon Technologies

Infineon IPT015N10N5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1200A IDM, 652mJ EAS, and 0.0015 ohm RDS(on). Package style is SMALL OUTLINE with METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$2.879

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 74 parts In-Stock

1+ parts

$0.722

100+ parts

$0.686

1k+ parts

$0.686

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74

$0.722

$0.686

$0.686

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Newark

USA . 3,416 parts In-Stock

1+ parts

$2.820

100+ parts

$2.820

1k+ parts

$2.820

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3,416

$2.820

$2.820

$2.820

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Farnell

UK . 10,157 parts In-Stock

1+ parts

$3.920

100+ parts

$2.490

1k+ parts

$1.700

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10,157

$3.920

$2.490

$1.700

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Chip1Stop

Japan . 849 parts In-Stock

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$5.260

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$3.400

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849

$5.260

$3.400

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Mouser Electronics

USA . 35,216 parts In-Stock

1+ parts

$6.670

100+ parts

$3.240

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$2.900

10k+ parts

$2.830

35,216

$6.670

$3.240

$2.900

$2.830

DigiKey

USA . 18,282 parts In-Stock

1+ parts

$7.790

100+ parts

$3.778

1k+ parts

$3.032

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$7.790

$3.778

$3.032

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EBV Elektronik

Germany . 322,000 parts In-Stock

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Avnet

USA . 256,000 parts In-Stock

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$2.738

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Verical

USA . 28,000 parts In-Stock

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$2.879

28,000

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$2.879

Arrow

USA . 22,000 parts In-Stock

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$2.191

22,000

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Element14

Singapore . 8,428 parts In-Stock

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$3.670

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$3.260

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8,428

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$3.260

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Future Electronics

Canada . 6,000 parts In-Stock

1+ parts

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$2.820

6,000

-

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$2.820

RS (Exports)

UK . 360 parts In-Stock

1+ parts

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100+ parts

$6.858

1k+ parts

$6.132

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360

-

$6.858

$6.132

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Rochester

USA . 198 parts In-Stock

1+ parts

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$1.980

1k+ parts

$1.770

10k+ parts

$1.660

198

-

$1.980

$1.770

$1.660

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 969 parts In-Stock

1+ parts

$0.686

100+ parts

-

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969

$0.686

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Greenchips

USA . 8,744 parts In-Stock

1+ parts

$2.398

100+ parts

$2.284

1k+ parts

$2.175

10k+ parts

$1.963

8,744

$2.398

$2.284

$2.175

$1.963

Maritex

Poland . 10,450 parts In-Stock

1+ parts

$4.060

100+ parts

$2.280

1k+ parts

$2.083

10k+ parts

$1.874

10,450

$4.060

$2.280

$2.083

$1.874

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$5.170

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600

$5.170

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NAC Semi

USA . 262,000 parts In-Stock

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Chip Stock

USA . 112,500 parts In-Stock

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Vyrian

USA . 67,075 parts In-Stock

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Cyclops Electronics Ltd

UK . 59,456 parts In-Stock

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Rutronik

Germany . 6,000 parts In-Stock

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$2.890

6,000

-

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$2.890

IBS Electronics

USA . 6,000 parts In-Stock

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$7.363

6,000

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$7.363

Bas Electronics GmbH & Co. KG

Germany . 282 parts In-Stock

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282

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LIBRA Elektronik GmbH

Germany . 125 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 64,758 parts In-Stock

1+ parts

$0.610

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64,758

$0.610

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Semicontronic

India . 64,682 parts In-Stock

1+ parts

$0.610

100+ parts

$0.595

1k+ parts

$0.592

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64,682

$0.610

$0.595

$0.592

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Corohmni

South Africa . 28 parts In-Stock

1+ parts

$0.635

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28

$0.635

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Corphita

USA . 349 parts In-Stock

1+ parts

$0.650

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349

$0.650

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Advanced Electronics

New Zealand . 74 parts In-Stock

1+ parts

$0.722

100+ parts

$0.686

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$0.686

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74

$0.722

$0.686

$0.686

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Modulus Dynamics

Lithuania . 6,347 parts In-Stock

1+ parts

$1.237

100+ parts

$1.188

1k+ parts

$1.138

10k+ parts

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6,347

$1.237

$1.188

$1.138

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Aztec Data Supply Inc.

USA . 4,767 parts In-Stock

1+ parts

$1.877

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4,767

$1.877

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$5.170

100+ parts

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$4.912

10k+ parts

$4.808

2,000

$5.170

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$4.912

$4.808

Microchip USA

USA . 128 parts In-Stock

1+ parts

$25.290

100+ parts

$25.130

1k+ parts

$25.050

10k+ parts

$24.980

128

$25.290

$25.130

$25.050

$24.980

Perfect Parts

USA . 24,640 parts In-Stock

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24,640

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Robosynatics

Brazil . 17,707 parts In-Stock

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$1.155

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$1.132

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$1.132

17,707

-

$1.155

$1.132

$1.132

Lucentia Tech

USA . 17,707 parts In-Stock

1+ parts

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$1.155

1k+ parts

$1.132

10k+ parts

$1.132

17,707

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$1.155

$1.132

$1.132

Continental Prestige Electronics

USA . 13,223 parts In-Stock

1+ parts

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100+ parts

$3.340

1k+ parts

$3.210

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13,223

-

$3.340

$3.210

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RC Electronics

USA . 9,236 parts In-Stock

1+ parts

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100+ parts

$5.090

1k+ parts

$4.640

10k+ parts

$4.510

9,236

-

$5.090

$4.640

$4.510

Lixinc

USA . 4,018 parts In-Stock

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4,018

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Argo Parts USA

USA . 2,954 parts In-Stock

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S.R.D Solutions

India . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Eastek

USA . 5 parts In-Stock

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5

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Overview

Unlock the power of efficient switching with the IPT015N10N5ATMA1 by Infineon Technologies. This high-quality N-CHANNEL Power Field Effect Transistor features a built-in diode, ensuring reliable performance in various applications. With a maximum pulsed drain current of 1200A and a minimum DS breakdown voltage of 100V, this transistor offers exceptional value and benefits to customers seeking a robust solution for their switching needs. Trust in Infineon Technologies' expertise and experience in semiconductor technology to deliver superior products that meet your requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and thermal stability, making the product suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer lower on-resistance and higher efficiency compared to P-channel FETs, making them a preferred choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for improved snubbing and protection against inductive kickback, enhancing the overall reliability of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast turn-on and turn-off times for efficient operation.

Surface Mount: YES

Surface mount compatibility makes it easy to integrate the FET into compact and densely populated circuit boards.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and efficient use of space within a circuit design.

Terminal Form: FLAT

The flat terminals ensure easy and secure connections, reducing the risk of shorts or poor contact.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs provide easy control over the on/off switching, making them suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 1200 A

With a high pulsed drain current rating, this FET can handle momentary high currents without damage, making it suitable for pulse applications.

Avalanche Energy Rating (EAS): 652 mJ

The high avalanche energy rating indicates the FET's ability to handle high energy spikes, ensuring reliability in harsh operating conditions.

No. of Terminals: 8

The 8 terminals provide flexibility in connection options, allowing for versatile circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for efficient heat dissipation, making it ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low on-resistance and high switching speeds, making it suitable for high-frequency applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and efficiency, making them a common choice for power applications.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Maximum Drain Current (ID): 32 A

With a high drain current rating, this FET can handle high continuous currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.0015 ohm

The low on-resistance minimizes power losses and heat generation, improving efficiency in power switching applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and reduces the risk of wiring errors.

Case Connection: DRAIN

The drain case connection is suitable for applications where the drain terminal needs to be connected to the case for heat dissipation or circuit layout purposes.

Technical Specifications

Power Field Effect Transistors (FET) IPT015N10N5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

652 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.0015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1200 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPT015N10N5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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