Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NTB6413ANG
Onsemi
NTB6413ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 178A IDM, and 0.028 ohm RDS(on). Ideal for applications requiring high power dissipation up to 136W in enhancement mode operation. Suitable for surface mount designs due to GULL WING terminals and small outline package style.
200 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
42 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
136 W
178 A
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
SINGLE
30
SILICON
NTD6415AN-1G
NTD6415AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). Ideal for applications requiring high drain current handling such as power supplies and motor control systems. Operating in enhancement mode, it features a built-in diode and can withstand up to 175 °C temperature.
79 mJ
23 A
.055 ohm
R-PSIP-T3
3
IN-LINE
89 A
NO
THROUGH-HOLE
NTD6415ANT4G
NTD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and features a built-in diode.
NTD6416AN-1G
NTD6416AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS. Ideal for power applications requiring high drain current handling in enhancement mode operation. Suitable for use in various electronic devices due to its high power dissipation of 71W and operating temperature up to 175 °C.
43 mJ
17 A
.081 ohm
71 W
62 A
NTP6410ANG
NTP6410ANG by Onsemi is a single N-channel power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 305A. Ideal for applications requiring high power dissipation up to 188W, such as in flange mount configurations for enhanced performance in enhancement mode operation.
500 mJ
76 A
.013 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
188 W
305 A
MATTE TIN
NTB5411NT4G
NTB5411NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 185A IDM, and 0.01 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 166W.
280 mJ
60 V
80 A
.01 ohm
166 W
185 A
SWITCHING
NTB5426NT4G
NTB5426NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A ID, 0.006 ohm RDS(on), and 260A IDM. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 215W in a SMALL OUTLINE package.
735 mJ
120 A
.006 ohm
215 W
260 A
FET General Purpose Powers
NTD5803NT4G
NTD5803NT4G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 76A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 240mJ Avalanche Energy Rating, and 0.0072 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
240 mJ
40 V
.0072 ohm
R-PDSO-G2
83 W
228 A
DUAL
NTD5807NT4G
NTD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 33W at 175 °C.
29.4 mJ
.031 ohm
33 W
45 A
NDD03N50ZT4G
NDD03N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 0.0033 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150 °C temperature.
120 mJ
500 V
2.6 A
.0033 ohm
150 Cel
58 W
10 A
NDD04N50Z-1G
NDD04N50Z-1G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 12A IDM, and 0.0027 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operations at up to 150 °C temperature.
3 A
.0027 ohm
61 W
12 A
NDF11N50ZG
NDF11N50ZG by Onsemi is a Power FET with 500V DS Breakdown Voltage, 42A IDM, and 0.52 ohm RDS. Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.
420 mJ
ISOLATED
6.7 A
.52 ohm
39 W
NTD5865N-1G
NTD5865N-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a RECTANGULAR package with TIN finish. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high performance in power management systems.
36 mJ
38 A
.018 ohm
137 A
NTD5865NL-1G
NTD5865NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It's an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. With a max power dissipation of 52W and operating temperature range from -55 to 150 °C, it's ideal for high-power circuit designs.
40 A
.019 ohm
-55 Cel
52 W
NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
NTD5865NT4G
NTD5865NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 36mJ EAS, and 0.018 ohm RDS(on). With a max power dissipation of 71W and operating temperature of 150 °C, it offers high performance in a small outline package.
43 A
NTTFS5811NLTAG
NTTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 211A Max Pulsed Drain Current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.
65 mJ
53 A
S-PDSO-F5
5
SQUARE
NOT SPECIFIED
211 A
Matte Tin (Sn) - annealed
FLAT
NTTFS5811NLTWG
NTTFS5811NLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 211A max pulsed drain current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.
Tin (Sn)
NTTFS5820NLTAG
NTTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package, ideal for power management applications requiring high current handling capabilities.
48 mJ
37 A
11 A
.0115 ohm
149 A
NTTFS5820NLTWG
NTTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
NTMFD4901NFT3G
NTMFD4901NFT3G by Onsemi is an N-channel Power FET for switching applications. It features a max pulsed drain current of 100A, avalanche energy rating of 115mJ, and max operating temperature of 150 °C. With a package style of small outline and terminal finish of matte tin, it is ideal for high-power electronic circuits.
115 mJ
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
23.4 A
13.5 A
.0035 ohm
R-PDSO-F8
8
3.45 W
100 A
NVD4804NT4G
NVD4804NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 230A, avalanche energy rating of 450mJ, and max power dissipation of 107W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and enhanced performance capabilities.
450 mJ
124 A
14.5 A
.0055 ohm
107 W
230 A
AEC-Q101
NVF3055L108T3G
NVF3055L108T3G by Onsemi is a N-CHANNEL FET with 3A max drain current and 2.1W power dissipation. Ideal for power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
2.1 W
NTD4863NA-1G
Onsemi's NTD4863NA-1G is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with THROUGH-HOLE terminals.
60.5 mJ
25 V
9.2 A
.014 ohm
98 A
NTD4863NAT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
NTMFS4845NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
115 A
NTMFS4845NT3G
Power Field-Effect Transistors; Maximum Drain Current (Abs) (ID): 115 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
NDF06N60ZG
NDF06N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in industrial equipment, power supplies, and motor control systems due to its robust design and performance.
113 mJ
600 V
7.1 A
1.2 ohm
35 W
28 A
NDF10N60ZG
NDF10N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 40A IDM, and 0.75 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C temperature.
300 mJ
6 A
.75 ohm
NTD5867NL-1G
NTD5867NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS. Ideal for applications requiring high power dissipation up to 36W in enhancement mode operation. Suitable for various electronic devices due to its N-channel configuration and built-in diode feature.
AVALANCHE RATED
18 mJ
20 A
.05 ohm
36 W
20.6 ns
19.1 ns
NTD5413NT4G
NTD5413NT4G by Onsemi is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 135mJ, suitable for high-power operations. With a 0.026 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, making it versatile for various industrial uses.
135 mJ
30 A
.026 ohm
68 W
84 A
MTP20N15E
MTP20N15E by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 112W at 150 °C.
60 mJ
150 V
.13 ohm
e0
235
112 W
60 A
TIN LEAD
NTB75N06LT4
NTB75N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 214W Pdiss, 175 °C Temp Rating, and EAS of 844mJ. Package: PLASTIC/EPOXY, GULL WING Terminals, ENHANCEMENT MODE operation.
844 mJ
75 A
.011 ohm
214 W
225 A
NTB75N06L
The Onsemi NTB75N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 225A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.011 ohm RDS(on), and 214W Pdiss. Suitable for surface mount designs in power electronics up to 175 °C operating temp.
NTD20N03L27
NTD20N03L27 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it ideal for high-power switching circuits.
288 mJ
1.75 W
NTD20N06T4
NTD20N06T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max power dissipation of 60W, making it ideal for high-power switching circuits.
170 mJ
.046 ohm
60 W
NTD3055-094-1
NTD3055-094-1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration in a plastic/epoxy package with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.5W at 175 °C.
61 mJ
.094 ohm
1.5 W
NTD3055-094
NTD3055-094 by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for switching applications. It features a 60V DS breakdown voltage, 45A pulsed drain current, and 0.094 ohm max on-resistance. With a small outline package style and operating temp of 175 °C, it's suitable for various electronic designs.
NTD3055L104
NTD3055L104 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). With a max power dissipation of 48W and operating temperature range of -55 to 175 °C, it is ideal for various electronic designs requiring high-performance transistors.
.104 ohm
48 W
NTP75N06L
NTP75N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS. It's used for SWITCHING applications due to its 214W Pdiss, 175 °C Temp, and EAS of 844mJ.
NTP75N06
NTP75N06 by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 225A Pulsed Drain Current, and 0.0095 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max temperature of 175 °C.
.0095 ohm
2.4 W
NTMD6N02R2
NTMD6N02R2 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A IDM, 0.035 ohm RDS(on), and 360mJ EAS for high-performance requirements. With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150 °C making it suitable for various industrial uses.
LOGIC LEVEL COMPATIBLE
360 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.92 A
.035 ohm
R-PDSO-G8
.73 W
Tin/Lead (Sn/Pb)
NTB45N06LT4
NTB45N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.028 ohm On Resistance, and 150A Pulsed Drain Current. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
150 A
NTB60N06LT4
NTB60N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
454 mJ
.016 ohm
150 W
180 A
NTB60N06L
NTB60N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power circuit designs requiring efficient switching capabilities.
NTD32N06L
NTD32N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm On Resistance. It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is PLASTIC/EPOXY with GULL WING terminals, suitable for surface mount assembly.
313 mJ
32 A
90 A
NTD32N06
NTD32N06 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.
93.75 W
NTD4302T4
NTD4302T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE and has a max temperature rating of 150 °C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
722 mJ
8.4 A
1.04 W
© 2023 All rights reserved
