Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVMFS5844NLWFT3G
Onsemi
NVMFS5844NLWFT3G by Onsemi is a single N-channel power FET with 61A max drain current and 107W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface-mount configurations.
SINGLE
61 A
METAL-OXIDE SEMICONDUCTOR
e3
1
175 Cel
260
N-CHANNEL
107 W
FET General Purpose Power
YES
TIN
30
NVMFS5885NLWFT1G
NVMFS5885NLWFT1G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration in various power systems.
39 A
54 W
MATTE TIN
NVMFS5885NLWFT3G
NVMFS5885NLWFT3G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for power applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration, it offers efficient performance in various electronic devices.
NVTFS4823NWFTAG
NVTFS4823NWFTAG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
30 A
21 W
NVTFS4823NWFTWG
NVTFS4823NWFTWG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems or industrial equipment.
NVTFS4824NWFTAG
NVTFS4824NWFTAG by Onsemi is a single N-channel Power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
46 A
NVTFS4824NWFTWG
NVTFS4824NWFTWG by Onsemi is a single N-channel power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
NVTFS5124PLWFTWG
NVTFS5124PLWFTWG by Onsemi is a P-CHANNEL power FET with a max drain current of 6A and max power dissipation of 18W. It is suitable for applications requiring high power handling in surface mount configurations, such as automotive electronics or industrial control systems.
6 A
P-CHANNEL
18 W
Other Transistors
NVTFS5811NLWFTWG
NVTFS5811NLWFTWG by Onsemi is a N-CHANNEL FET with 40A max drain current and 21W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration into various electronic systems.
40 A
NVTFS5820NLWFTAG
NVTFS5820NLWFTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 247A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
48 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
.0115 ohm
S-PDSO-F5
5
ENHANCEMENT MODE
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
NOT SPECIFIED
247 A
AEC-Q101
Tin (Sn)
FLAT
DUAL
SILICON
NVTFS5820NLWFTWG
NVTFS5820NLWFTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 0.0115 ohm RDS(on), and 247A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features an N-CHANNEL configuration with built-in diode in a small outline package.
Matte Tin (Sn) - annealed
NVTFS5826NLWFTWG
NVTFS5826NLWFTWG by Onsemi is a single N-channel Power FET with 20A max drain current and 22W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface mount configurations.
20 A
22 W
ECH8672-TL-H
ECH8672-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as power management systems in automotive or industrial settings.
3.5 A
e6
150 Cel
1.5 W
TIN BISMUTH
EMH2411R-TL-H
EMH2411R-TL-H by Onsemi is a N-CHANNEL FET with 5A max drain current and 1.4W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates at up to 150 °C with surface mount capability.
5 A
1.4 W
FET General Purpose Powers
NVMFD5489NLT1G
NVMFD5489NLT1G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C, ideal for high-power applications in surface mount designs.
12 A
23.4 W
NVMFD5489NLT3G
NVMFD5489NLT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount technology for easy installation in various electronic devices.
NVMFD5489NLWFT3G
NVMFD5489NLWFT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, suitable for surface mount applications in various electronic devices.
NVD5414NT4G
NVD5414NT4G by Onsemi is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 75A IDM, and 0.037 ohm RDS(on). Suitable for automotive (AEC-Q101) and industrial use with 175 °C max operating temp.
86.4 mJ
24 A
.037 ohm
R-PSSO-G2
2
RECTANGULAR
55 W
75 A
GULL WING
SWITCHING
ATP301-TL-H
The Onsemi ATP301-TL-H is a P-CHANNEL FET with 100V DS breakdown voltage, 112A IDM, and 0.075 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for surface mount designs due to its small outline package style.
54 mJ
100 V
28 A
.075 ohm
70 W
112 A
BFL4004-1E
BFL4004-1E by Onsemi is a N-CHANNEL FET with 4.3A ID and 36W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish terminals. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
4.3 A
36 W
NO
NTMFD4902NFT3G
NTMFD4902NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, it offers high performance in power management systems.
28.8 mJ
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
13.5 A
.01 ohm
R-PDSO-F8
8
60 A
SMP3003-TL-1E
SMP3003-TL-1E by Onsemi is a P-CHANNEL FET with 75V DS Breakdown Voltage, 400A IDM, and 0.011 ohm RDS(ON). Ideal for power applications due to its EAS of 468mJ, ENHANCEMENT MODE operation, and DRAIN case connection.
468 mJ
75 V
100 A
.011 ohm
TO-263AB
245
400 A
BBS3002-TL-1E
BBS3002-TL-1E by Onsemi is a P-channel Power FET with 60V DS breakdown voltage, 400A IDM, and 0.009 ohm max RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C operating temperature.
340 mJ
.009 ohm
950 pF
90 W
NDUL03N150CG
NDUL03N150CG by Onsemi is a Power FET with 1500V DS Breakdown Voltage, 5A IDM, and 10.5 ohm RDS(on). It is an N-CHANNEL transistor in a RECTANGULAR package suitable for high-voltage applications like power supplies and industrial controls.
34 mJ
1500 V
2.5 A
10.5 ohm
R-PSFM-T3
3
FLANGE MOUNT
THROUGH-HOLE
NDD60N745U1-1G
NDD60N745U1-1G by Onsemi is a N-channel Power FET with 6.8A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology. Suitable for various industrial and automotive uses due to its robust design and high performance capabilities.
6.8 A
83 W
NDD60N900U1-1G
NDD60N900U1-1G by Onsemi is a N-channel FET with 5.9A max drain current and 74W power dissipation. Ideal for power applications, it operates up to 150°C, making it suitable for high-temperature environments requiring efficient power management.
5.9 A
74 W
NDD60N900U1T4G
NDD60N900U1T4G by Onsemi is an N-CHANNEL FET with 5.9A max drain current and 74W max power dissipation. Ideal for power applications, it operates at up to 150°C and features surface mount configuration for efficient installation in various electronic devices.
NDD60N550U1-1G
NDD60N550U1-1G by Onsemi is a N-CHANNEL FET with 8.5A ID and 96W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish, MSL level 3, and peak reflow temp of 260°C in METAL-OXIDE SEMICONDUCTOR technology.
8.5 A
96 W
NDD60N550U1T4G
NDD60N550U1T4G by Onsemi is an N-CHANNEL FET with 8.5A max drain current and 96W max power dissipation. Ideal for power applications, it operates at up to 150 °C and features surface mount configuration for easy installation.
BMS3004-1E
BMS3004-1E by Onsemi is a P-channel Power FET with 75V DS breakdown voltage, 272A IDM, and 0.0114 ohm max RDS(on). Ideal for applications requiring high drain current handling capabilities in enhancement mode operation. Package style: Flange mount, terminal finish: Matte Tin, and isolated case connection.
380 mJ
ISOLATED
68 A
.0114 ohm
TO-220AB
272 A
MCH6445-TL-W
MCH6445-TL-W by Onsemi is a N-CHANNEL FET with 4A max drain current and 1.5W power dissipation. Ideal for enhancement mode operation, it features metal-oxide semiconductor technology and can withstand up to 150 °C. Suitable for various power applications requiring high efficiency and reliability in surface mount configurations.
4 A
NTTFS4H05NTWG
NTTFS4H05NTWG by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max pulsed drain current of 304A, avalanche energy rating of 84mJ, and max operating temperature of 150°C. This MOSFET has a drain-source on resistance of 0.0048 ohm and can handle a max drain current of 22.4A efficiently in various electronic circuits.
84 mJ
25 V
94 A
22.4 A
.0048 ohm
46.3 W
304 A
NTMFS4H01NT1G
NTMFS4H01NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 568A IDM, and 0.00097 ohm RDS(on). Ideal for SWITCHING applications due to its 505mJ EAS rating. It comes in a PLASTIC/EPOXY package with DUAL terminals and operates at up to 150 °C.
505 mJ
54 A
.00097 ohm
212 pF
R-PDSO-F5
125 W
568 A
NTMFS4H01NT3G
NTMFS4H01NT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
334 A
NTMFS4H02NFT3G
NTMFS4H02NFT3G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, making it suitable for demanding environments requiring efficient power management.
193 A
NTTFS4H07NTAG
NTTFS4H07NTAG by Onsemi is a single N-channel power FET with 66A max drain current and 33.8W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, and is ideal for high-power applications in surface-mount configurations.
66 A
33.8 W
NTTFS4H07NTWG
NTTFS4H07NTWG by Onsemi is a single N-channel Power FET with 66A max drain current and 33.8W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, ideal for high-power applications in surface-mount configurations.
NTMFS4H01NFT1G
NTMFS4H01NFT1G by Onsemi is a N-CHANNEL FET with 334A max drain current and 125W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features surface mount configuration for efficient heat dissipation.
NTMFS4H01NFT3G
NTMFS4H01NFT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching and control in surface-mount configurations.
NTMFS4H02NT1G
NTMFS4H02NT1G by Onsemi is a N-CHANNEL FET with 193A max drain current and 83W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
NTMFS4H02NT3G
NTMFS4H02NT3G by Onsemi is a single N-channel Power FET with 193A max drain current and 83W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features metal-oxide semiconductor technology.
BBL4001-1E
BBL4001-1E by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 296A IDM. Ideal for applications requiring high power dissipation up to 35W, such as power management systems. Features include single configuration, rectangular package shape, and enhanced mode operation.
370 mJ
74 A
.0098 ohm
540 pF
2 W
35 W
296 A
NTD4965N-35G
NTD4965N-35G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 248A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring efficient performance in an IN-LINE package style.
60 mJ
13 A
R-PSIP-T3
IN-LINE
38.5 W
248 A
Not Qualified
NTD4969N-35G
NTD4969N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.019 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with built-in DIODE. Operating at up to 175 °C, it has a max power dissipation of 26.3W.
15 mJ
41 A
9.4 A
.019 ohm
26.3 W
150 A
NTD4970NT4G
NTD4970NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 130A and EAS of 18mJ, suitable for high-power operations. With a 0.021 ohm Drain-Source On Resistance, it offers efficient performance in ENHANCEMENT MODE operation at up to 175 °C.
18 mJ
36 A
.021 ohm
24.6 W
130 A
NTD5862N-1G
NTD5862N-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS. Ideal for applications requiring high drain current handling in enhancement mode operation. Package style: IN-LINE, Terminal finish: TIN, Case connection: DRAIN.
205 mJ
90 A
.0057 ohm
335 A
NTMFS5834NLT1G
NTMFS5834NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 276A pulsed drain current. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies and motor control systems.
40 V
.0136 ohm
276 A
NTTFS4929NTAG
NTTFS4929NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 69A Max Pulsed Drain Current, and 0.017 ohm Max RDS(on). With a small outline package style and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
34 A
10.6 A
.017 ohm
22.3 W
69 A
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