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NDD60N900U1T4G

Onsemi

NDD60N900U1T4G by Onsemi

NDD60N900U1T4G by Onsemi is an N-CHANNEL FET with 5.9A max drain current and 74W max power dissipation. Ideal for power applications, it operates at up to 150°C and features surface mount configuration for efficient installation in various electronic devices.

Median Price

$0.713

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,380 parts In-Stock

1+ parts

$0.322

100+ parts

$0.303

1k+ parts

$0.288

10k+ parts

-

1,380

$0.322

$0.303

$0.288

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Rochester

USA . 1,922 parts In-Stock

1+ parts

-

100+ parts

$0.753

1k+ parts

$0.625

10k+ parts

$0.557

1,922

-

$0.753

$0.625

$0.557

Verical

USA . 1,922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.781

10k+ parts

$0.697

1,922

-

-

$0.781

$0.697

Farnell

UK . 1,922 parts In-Stock

1+ parts

-

100+ parts

-

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$0.713

1,922

-

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-

$0.713

Chip1Stop

Japan . 1,380 parts In-Stock

1+ parts

-

100+ parts

$0.303

1k+ parts

$0.288

10k+ parts

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1,380

-

$0.303

$0.288

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,888 parts In-Stock

1+ parts

$0.306

100+ parts

-

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1,888

$0.306

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Nova Conductors

Japan . 44 parts In-Stock

1+ parts

$0.551

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44

$0.551

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Vyrian

USA . 7,263 parts In-Stock

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7,263

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DigiKey Marketplace

USA . 1,922 parts In-Stock

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1,922

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Distributors (Availability)

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Corphita

USA . 1,233 parts In-Stock

1+ parts

$0.290

100+ parts

-

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1,233

$0.290

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Corohmni

South Africa . 129 parts In-Stock

1+ parts

$0.303

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129

$0.303

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.540

100+ parts

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1k+ parts

$0.518

10k+ parts

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100

$0.540

-

$0.518

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Argo Parts USA

USA . 442 parts In-Stock

1+ parts

$0.551

100+ parts

-

1k+ parts

-

10k+ parts

$0.534

442

$0.551

-

-

$0.534

Ampacity Inc.

Singapore . 1,555 parts In-Stock

1+ parts

$0.560

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1,555

$0.560

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Microchip USA

USA . 6,260 parts In-Stock

1+ parts

$3.835

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6,260

$3.835

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AZTECH Wire

Italy . 1,151 parts In-Stock

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$22.030

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$22.030

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Perfect Parts

USA . 17,853 parts In-Stock

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Problanco Electronics

Mexico . 6,341 parts In-Stock

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6,341

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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GreenTree Electronics

Israel . 2,470 parts In-Stock

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2,470

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Kulean Microsystems

USA . 2,015 parts In-Stock

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2,015

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Continental Prestige Electronics

USA . 1,922 parts In-Stock

1+ parts

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100+ parts

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$0.566

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1,922

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$0.566

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TANS Electronics

Latvia . 1,879 parts In-Stock

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1,879

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SupplyDigital Components

Austria . 803 parts In-Stock

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803

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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677

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Overview

Unleash the power of innovation with the NDD60N900U1T4G by Onsemi. Crafted with precision by a renowned manufacturer, this N-CHANNEL Power Field Effect Transistor offers unparalleled performance and reliability for a wide range of applications. From enhancing energy efficiency to improving circuit performance, this cutting-edge technology is designed to deliver exceptional value and benefits to customers. Elevate your projects to new heights with the superior quality and advantages of the NDD60N900U1T4G.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs offer lower conduction losses and higher efficiency compared to P-CHANNEL FETs, making this product a good choice for power applications.

Maximum Drain Current (Abs) (ID): 5.9 A

With a high maximum drain current, this FET can handle heavy loads without risk of damage, making it suitable for high power applications.

Maximum Power Dissipation (Abs): 74 W

The high maximum power dissipation ensures that this FET can operate efficiently without overheating, making it reliable for continuous use.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising performance, ensuring stability in harsh environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this FET suitable for demanding applications where precision is crucial.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reflow soldering without damaging the FET, making it easy to integrate into circuit boards for manufacturing purposes.

Technical Specifications

Power Field Effect Transistors (FET) NDD60N900U1T4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.9 A

Maximum Drain Current (ID):

5.9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NDD60N900U1T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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