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IRLML2502

International Rectifier

IRLML2502 by International Rectifier

IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.

Median Price

$0.680

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DigiKey

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$0.680

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$0.255

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$0.169

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$0.132

5,040

$0.680

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$0.132

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Nova Conductors

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Kruse Electronics AG

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Vyrian

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Partservice

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$0.108

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$0.047

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Micros sp.j. W. Kędra i J. Lic

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$0.115

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Micros

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NPI Materials, Inc.

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Advanced Electronics

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$0.587

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Aztec Data Supply Inc.

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$0.930

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Overview

Experience superior performance and reliability with the IRLML2502 by International Rectifier, a leading manufacturer in the field of Power Field Effect Transistors (FET). This N-CHANNEL transistor with a single built-in diode is perfect for switching applications, offering enhanced efficiency and power management. With a maximum drain current of 4.2 A and a low on-resistance of just 0.045 ohm, this transistor ensures optimal functionality and durability. Trust International Rectifier for top-notch quality and innovation that meets your power needs. Elevate your projects with the IRLML2502 and enjoy seamless operation and energy savings like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically offer lower on-state resistance and faster switching speeds compared to P-Channel FETs, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier and more efficient circuit design, reducing the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient switching characteristics.

Surface Mount: YES

Surface mount capability makes installation and integration of the FET easier and more space-efficient.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltage applications safely.

Maximum Pulsed Drain Current (IDM): 33 A

High pulsed drain current rating allows for handling of sudden power surges and spikes effectively.

Maximum Drain Current (Abs) (ID): 4.2 A

Sufficient drain current rating for many switching applications, ensuring reliable performance.

Maximum Power Dissipation (Abs): 1.3 W

Low power dissipation helps to minimize heat generation and improve overall efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliable performance even in demanding environments.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance leads to reduced conduction losses and improved efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) IRLML2502 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.2 A

Maximum Drain Current (ID):

4.2 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

33 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLML2502 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-578-3436, 5961015783436

NIIN

015783436

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