Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3;
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Power Field Effect Transistors (FET) NDD60N900U1-35G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Moisture Sensitivity Level (MSL):
NDD60N900U1-35G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
BAV99
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FT232RL-TUBE
FTDI
FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.
Zetex Plc
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
IRF540SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
SI4946BEY-T1-GE3
Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
FDS6680A
Onsemi
FDS6680A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 50A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can handle up to 12.5A drain current.
DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7 by Diodes Inc. is a Power FET with N/P-channel, 30V DS breakdown voltage, and 0.06 ohm max RDS(on). Ideal for switching applications, it features 2 elements in separate configuration with built-in diode. With 13A IDM and small outline package style, it operates at up to 150°C.
BSS123
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Moisture Sensitivity Level (MSL): 1;
FDS8949
FDS8949 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 20A IDM. It features SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, suitable for applications requiring high power dissipation in small outline packages. Ideal for enhancing performance in electronic devices operating at temperatures up to 150°C.
IRF5305STRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Case Connection: DRAIN;
IRF7404TRPBF
IRF7404TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage and 27A IDM. Ideal for power applications, it features a single configuration with built-in diode, small outline package style, and -55 to 150 °C operating temperature range.
AUIRF5210STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
IRFP250NPBF
IRFP250NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 315mJ EAS, and 0.075ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W and can withstand temperatures from -55 to 150 °C.
DMG2301L-7
DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.
BSC22DN20NS3GATMA1
Infineon's BSC22DN20NS3GATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 28A IDM and 0.225 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor has DUAL terminals and a built-in DIODE, making it suitable for high-power circuit designs.
IRF530NSTRLPBF
Infineon's IRF530NSTRLPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 17A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 0.09 ohm RDS(on), and 60A IDM. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
2N7000
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
FDS8949-F085
FDS8949-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features 2 elements with built-in diode for SWITCHING applications. With 20A IDM and 0.029 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
FDB44N25TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
STP55NF06
STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
IRF3415STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
FDMS86350ET80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 187 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 5;
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
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NDD60N900U1T4G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
NDD60N900U1-1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 74 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
NDD60N360U1-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 11 A;
NDD60N360U1-35G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
NDD60N360U1T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .36 ohm;
NDD60N550U1-1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
NDD60N550U1-35G
NDD60N550U1T4G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Drain Current (Abs) (ID): 8.5 A; Maximum Drain Current (ID): 8.5 A;
NDD60N745U1-1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel;
NDD60N745U1-35G
NDD60N745U1T4G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
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