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G3R350MT12D

Genesic Semiconductor

G3R350MT12D by Genesic Semiconductor

G3R350MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features a max IDM of 16A and EAS of 43mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and DRAIN case connection, it offers 0.455 ohm RDS(on) and can handle up to 63W power dissipation.

Median Price

$4.740

Lifecycle Status

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8

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1k+

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Verical

USA . 3,171 parts In-Stock

1+ parts

$4.340

100+ parts

$3.490

1k+ parts

$3.030

10k+ parts

-

3,171

$4.340

$3.490

$3.030

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Mouser Electronics

USA . 4,214 parts In-Stock

1+ parts

$4.740

100+ parts

$3.730

1k+ parts

$3.250

10k+ parts

$3.100

4,214

$4.740

$3.730

$3.250

$3.100

Newark

USA . 1,396 parts In-Stock

1+ parts

$4.880

100+ parts

$3.840

1k+ parts

$3.540

10k+ parts

-

1,396

$4.880

$3.840

$3.540

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DigiKey

USA . 335 parts In-Stock

1+ parts

$7.940

100+ parts

$4.584

1k+ parts

$3.845

10k+ parts

-

335

$7.940

$4.584

$3.845

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Master Electronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$3.480

1k+ parts

$3.160

10k+ parts

$2.990

800

-

$3.480

$3.160

$2.990

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$3.726

100+ parts

-

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-

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150

$3.726

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-

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TME

Poland . 260 parts In-Stock

1+ parts

$3.790

100+ parts

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260

$3.790

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Vyrian

USA . 3,407 parts In-Stock

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3,407

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Argo Parts USA

USA . 4,018 parts In-Stock

1+ parts

$3.584

100+ parts

-

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4,018

$3.584

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$3.651

100+ parts

-

1k+ parts

$3.505

10k+ parts

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1,000

$3.651

-

$3.505

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Continental Prestige Electronics

USA . 149 parts In-Stock

1+ parts

$5.020

100+ parts

$3.560

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149

$5.020

$3.560

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$6.026

100+ parts

$5.724

1k+ parts

$5.724

10k+ parts

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900

$6.026

$5.724

$5.724

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Microchip USA

USA . 9,416 parts In-Stock

1+ parts

$30.810

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9,416

$30.810

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Authorized Procurement Solutions

USA . 6,800 parts In-Stock

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6,800

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Aztec Data Supply Inc.

USA . 698 parts In-Stock

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698

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

1+ parts

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100+ parts

$2.969

1k+ parts

$2.969

10k+ parts

$2.969

500

-

$2.969

$2.969

$2.969

Overview

Discover the power and efficiency of the G3R350MT12D by Genesic Semiconductor, a top-tier manufacturer of Power Field Effect Transistors. This N-CHANNEL transistor with built-in diode is ideal for switching applications, offering a high minimum DS Breakdown Voltage of 1200V and maximum Pulsed Drain Current of 16A. With a focus on quality and reliability, this silicon carbide transistor ensures optimal performance even in harsh conditions. Upgrade your electronic devices with the G3R350MT12D and experience enhanced functionality and increased efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and resistant to external elements, increasing its durability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance and lower ON resistance compared to P-Channel FETs, making this product a good choice for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and protects against reverse voltage spikes, making this product more user-friendly and reliable.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast and efficient switching capabilities, making it suitable for various power control tasks.

Minimum DS Breakdown Voltage: 1200 V

With a high breakdown voltage, this FET can handle high voltage applications without risk of damage, providing a reliable solution for demanding environments.

Maximum Pulsed Drain Current (IDM): 16 A

The high pulsed drain current rating allows the FET to handle short-term peak currents efficiently, making it suitable for applications with varying power requirements.

Avalanche Energy Rating (EAS): 43 mJ

The high avalanche energy rating indicates the FET's ability to withstand energy spikes and power surges, ensuring long-term reliability in tough operating conditions.

Maximum Power Dissipation (Abs): 63 W

With a high power dissipation capacity, this FET can effectively handle heat generated during operation, improving overall performance and longevity.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance allows the FET to operate in high-temperature environments without risk of overheating, ensuring consistent performance.

Technical Specifications

Power Field Effect Transistors (FET) G3R350MT12D attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Genesic Semiconductor

Specs

Avalanche Energy Rating (EAS):

43 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.455 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.8 pF

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

16 A

Reference Standard:

IEC-607478-4

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

G3R350MT12D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Genesic Semiconductor

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.

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