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BSZ040N06LS5ATMA1

Infineon Technologies

BSZ040N06LS5ATMA1 by Infineon Technologies

Infineon's BSZ040N06LS5ATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 117mJ EAS, and 0.004 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a -55°C Min Operating Temp.

Median Price

$0.827

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 5 parts In-Stock

1+ parts

$0.230

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5

$0.230

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Chip1Stop

Japan . 8,134 parts In-Stock

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$0.675

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$0.675

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RS Americas

USA . 5 parts In-Stock

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$1.550

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$1.240

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$1.010

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5

$1.550

$1.240

$1.010

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Mouser Electronics

USA . 72,734 parts In-Stock

1+ parts

$2.500

100+ parts

$1.090

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$0.822

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$0.738

72,734

$2.500

$1.090

$0.822

$0.738

Newark

USA . 5,234 parts In-Stock

1+ parts

$2.720

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$1.180

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$0.941

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$2.720

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$0.941

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Rochester

USA . 191,349 parts In-Stock

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$0.797

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$0.662

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$0.590

191,349

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$0.797

$0.662

$0.590

Verical

USA . 125,928 parts In-Stock

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$0.827

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$0.738

125,928

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$0.827

$0.738

Arrow

USA . 30,000 parts In-Stock

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$0.621

30,000

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$0.621

Element14

Singapore . 24,899 parts In-Stock

1+ parts

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$1.530

1k+ parts

$1.040

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$1.000

24,899

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$1.530

$1.040

$1.000

DigiKey

USA . 24,380 parts In-Stock

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$0.684

24,380

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$0.684

Farnell

UK . 14,955 parts In-Stock

1+ parts

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$0.873

1k+ parts

$0.592

10k+ parts

$0.573

14,955

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$0.873

$0.592

$0.573

Future Electronics

Canada . 10,000 parts In-Stock

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$1.120

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$1.120

Avnet

USA . 10,000 parts In-Stock

1+ parts

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$0.514

10,000

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$0.514

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 795 parts In-Stock

1+ parts

$0.698

100+ parts

-

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795

$0.698

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.074

100+ parts

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500

$1.074

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Maritex

Poland . 40,000 parts In-Stock

1+ parts

$1.518

100+ parts

$0.783

1k+ parts

$0.604

10k+ parts

$0.524

40,000

$1.518

$0.783

$0.604

$0.524

Vyrian

USA . 36,555 parts In-Stock

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Rutronik

Germany . 5,000 parts In-Stock

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$0.478

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$0.478

NAC Semi

USA . 5,000 parts In-Stock

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$0.710

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$0.710

IBS Electronics

USA . 5,000 parts In-Stock

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$1.837

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$1.837

VNN

France . 2,784 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Semicontronic

India . 36,295 parts In-Stock

1+ parts

$0.456

100+ parts

$0.445

1k+ parts

$0.442

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36,295

$0.456

$0.445

$0.442

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Ampacity Inc.

Singapore . 35,945 parts In-Stock

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$0.456

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Corphita

USA . 303 parts In-Stock

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$0.662

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303

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Aztec Data Supply Inc.

USA . 149 parts In-Stock

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$0.709

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149

$0.709

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Allen Electronics Distributors

USA . 5 parts In-Stock

1+ parts

$0.770

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5

$0.770

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.858

100+ parts

$0.815

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$0.815

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1,000

$0.858

$0.815

$0.815

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Corohmni

South Africa . 205 parts In-Stock

1+ parts

$1.033

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$1.033

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Argo Parts USA

USA . 603 parts In-Stock

1+ parts

$1.074

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603

$1.074

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Netroflash

USA . 500 parts In-Stock

1+ parts

$1.074

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$1.021

10k+ parts

$0.999

500

$1.074

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$1.021

$0.999

Continental Prestige Electronics

USA . 16,645 parts In-Stock

1+ parts

$1.540

100+ parts

$0.981

1k+ parts

$0.657

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16,645

$1.540

$0.981

$0.657

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Modulus Dynamics

Lithuania . 3,980 parts In-Stock

1+ parts

$1.943

100+ parts

$1.865

1k+ parts

$1.788

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3,980

$1.943

$1.865

$1.788

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Microchip USA

USA . 6,316 parts In-Stock

1+ parts

$4.791

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6,316

$4.791

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RC Electronics

USA . 46,174 parts In-Stock

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$0.960

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$0.880

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$0.850

46,174

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$0.960

$0.880

$0.850

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 12,303 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Eastek

USA . 10,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Robosynatics

Brazil . 2,166 parts In-Stock

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$1.857

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$1.819

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$1.819

2,166

-

$1.857

$1.819

$1.819

Lucentia Tech

USA . 2,166 parts In-Stock

1+ parts

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$1.857

1k+ parts

$1.819

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$1.819

2,166

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$1.857

$1.819

$1.819

A-Z Elektronik GmbH

Germany . 1,478 parts In-Stock

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1,478

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Alle Elektronik GmbH

Germany . 985 parts In-Stock

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985

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Kepictronics

USA . 447 parts In-Stock

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447

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Overview

Unlock the power of efficiency and reliability with the BSZ040N06LS5ATMA1 from Infineon Technologies. As a leader in the industry, Infineon ensures top-notch quality and performance in all their products. This N-CHANNEL Power Field Effect Transistor is perfect for various SWITCHING applications, offering enhanced functionality and durability. With a Maximum Pulsed Drain Current of 160 A and a Minimum DS Breakdown Voltage of 60 V, this transistor provides unmatched value and benefits to customers looking for a high-performance solution. Upgrade your systems today with the BSZ040N06LS5ATMA1 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and helps to protect the transistor from voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast operation.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages without damage.

Package Shape: SQUARE

The square shape is compact and space-saving, ideal for applications with limited space.

Terminal Form: NO LEAD

Lead-free terminals are environmentally friendly and comply with RoHS regulations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and ideal for most switching applications.

Maximum Pulsed Drain Current (IDM): 160 A

High pulsed current capability allows the FET to handle momentary surges without failure.

Avalanche Energy Rating (EAS): 117 mJ

The high avalanche energy rating ensures the FET can withstand energy spikes without damage.

No. of Terminals: 8

Having 8 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

Compact small outline package is space-saving and suitable for miniaturized designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in FETs.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its stable performance.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this FET can function in extreme cold environments.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections.

Maximum Drain Current (ID): 17 A

With a high drain current rating, this FET can handle substantial loads with ease.

Maximum Drain-Source On Resistance: 0.004 ohm

Low drain-source on resistance minimizes power loss and improves efficiency in the circuit.

Terminal Position: DUAL

Dual terminal position allows for versatile installation and connection options.

Case Connection: DRAIN

Case connection at the drain terminal simplifies circuit layout and improves thermal management.

Technical Specifications

Power Field Effect Transistors (FET) BSZ040N06LS5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

117 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.004 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

160 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ040N06LS5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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