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BSZ086P03NS3EGATMA1

Infineon Technologies

BSZ086P03NS3EGATMA1 by Infineon Technologies

Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.

Median Price

$0.468

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 239 parts In-Stock

1+ parts

$0.304

100+ parts

$0.304

1k+ parts

$0.304

10k+ parts

-

239

$0.304

$0.304

$0.304

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Chip1Stop

Japan . 9,860 parts In-Stock

1+ parts

$0.485

100+ parts

-

1k+ parts

-

10k+ parts

-

9,860

$0.485

-

-

-

Rochester

USA . 60,418 parts In-Stock

1+ parts

-

100+ parts

$0.377

1k+ parts

$0.313

10k+ parts

$0.279

60,418

-

$0.377

$0.313

$0.279

Farnell

UK . 32,791 parts In-Stock

1+ parts

-

100+ parts

$0.531

1k+ parts

$0.343

10k+ parts

$0.318

32,791

-

$0.531

$0.343

$0.318

Element14

Singapore . 25,766 parts In-Stock

1+ parts

-

100+ parts

$0.867

1k+ parts

$0.488

10k+ parts

$0.478

25,766

-

$0.867

$0.488

$0.478

RS (Exports)

UK . 14,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.451

14,320

-

-

-

$0.451

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.218

10,000

-

-

-

$0.218

Verical

USA . 8,990 parts In-Stock

1+ parts

-

100+ parts

$0.510

1k+ parts

$0.367

10k+ parts

$0.296

8,990

-

$0.510

$0.367

$0.296

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 74 parts In-Stock

1+ parts

$0.293

100+ parts

-

1k+ parts

-

10k+ parts

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74

$0.293

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.492

100+ parts

-

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-

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50

$0.492

-

-

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Maritex

Poland . 44,650 parts In-Stock

1+ parts

$0.698

100+ parts

-

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10k+ parts

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44,650

$0.698

-

-

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Chip Stock

USA . 139,300 parts In-Stock

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139,300

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Vyrian

USA . 18,362 parts In-Stock

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18,362

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IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.286

15,000

-

-

-

$0.286

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.640

5,000

-

-

-

$0.640

VNN

France . 1,983 parts In-Stock

1+ parts

-

100+ parts

-

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-

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1,983

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 21,082 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

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21,082

$0.185

-

-

-

Semicontronic

India . 18,609 parts In-Stock

1+ parts

$0.185

100+ parts

$0.180

1k+ parts

$0.179

10k+ parts

-

18,609

$0.185

$0.180

$0.179

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Corphita

USA . 738 parts In-Stock

1+ parts

$0.277

100+ parts

-

1k+ parts

-

10k+ parts

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738

$0.277

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.417

100+ parts

$0.379

1k+ parts

$0.342

10k+ parts

-

600

$0.417

$0.379

$0.342

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Continental Prestige Electronics

USA . 6,250 parts In-Stock

1+ parts

$0.433

100+ parts

-

1k+ parts

-

10k+ parts

$0.424

6,250

$0.433

-

-

$0.424

Argo Parts USA

USA . 2,319 parts In-Stock

1+ parts

$0.433

100+ parts

-

1k+ parts

-

10k+ parts

$0.420

2,319

$0.433

-

-

$0.420

Modulus Dynamics

Lithuania . 23,067 parts In-Stock

1+ parts

$0.492

100+ parts

$0.472

1k+ parts

$0.453

10k+ parts

-

23,067

$0.492

$0.472

$0.453

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Corohmni

South Africa . 377 parts In-Stock

1+ parts

$0.492

100+ parts

-

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-

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377

$0.492

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Netroflash

USA . 100 parts In-Stock

1+ parts

$0.492

100+ parts

$0.482

1k+ parts

-

10k+ parts

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100

$0.492

$0.482

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Aztec Data Supply Inc.

USA . 2,558 parts In-Stock

1+ parts

$0.540

100+ parts

-

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2,558

$0.540

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Andel Nordic

Denmark . 1,661 parts In-Stock

1+ parts

$19.250

100+ parts

-

1k+ parts

$13.475

10k+ parts

$13.475

1,661

$19.250

-

$13.475

$13.475

RC Electronics

USA . 35,000 parts In-Stock

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35,000

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Lixinc

USA . 14,751 parts In-Stock

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Perfect Parts

USA . 11,312 parts In-Stock

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11,312

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Robosynatics

Brazil . 8,304 parts In-Stock

1+ parts

-

100+ parts

$0.482

1k+ parts

$0.472

10k+ parts

$0.472

8,304

-

$0.482

$0.472

$0.472

Lucentia Tech

USA . 8,304 parts In-Stock

1+ parts

-

100+ parts

$0.482

1k+ parts

$0.472

10k+ parts

$0.472

8,304

-

$0.482

$0.472

$0.472

GreenTree Electronics

Israel . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Microchip USA

USA . 3,003 parts In-Stock

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3,003

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Overview

Elevate your power management solutions with the BSZ086P03NS3EGATMA1 by Infineon Technologies. Crafted with precision and expertise, this P-Channel Power Field Effect Transistor delivers unrivaled performance in switching applications. Its single configuration with a built-in diode ensures seamless operation, while the small outline package design adds convenience. Experience enhanced efficiency and reliability with a maximum drain current of 13.5 A and a low on-resistance of 0.0134 ohm. Trust in Infineon's cutting-edge technology to optimize your systems and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that helps protect the internal components of the FET.

Polarity or Channel Type: P-CHANNEL

P-channel FETs can offer certain advantages in specific circuit designs, such as lower leakage current and better thermal stability.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for reverse current protection, making the FET suitable for various applications requiring this feature.

Transistor Application: SWITCHING

Designed for efficient switching operations in various electronic circuits, making it versatile for different applications.

Surface Mount: YES

Suitable for automated manufacturing processes, reducing assembly time and costs for electronic devices.

Minimum DS Breakdown Voltage: 30 V

Can handle relatively high voltages, providing a safety margin for voltage spikes or fluctuations.

Package Shape: SQUARE

Square shape allows for efficient use of board space and easier integration into compact electronic designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to use in circuit designs due to their normally-off behavior, providing better control over current flow.

Maximum Pulsed Drain Current (IDM): 160 A

High pulsed current rating allows for handling short-duration high current spikes without damage.

Avalanche Energy Rating (EAS): 105 mJ

Can withstand significant energy spikes during avalanche breakdown, ensuring reliability in harsh operating conditions.

No. of Terminals: 8

Provides multiple connection points for versatile circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the PCB and enables denser designs for electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds, low power consumption, and high input impedance, suitable for various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring reliability in demanding environments.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability, stability, and efficiency in electronic devices.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Drain Current (ID): 13.5 A

Can carry relatively high continuous current, suitable for power applications that require continuous operation.

Maximum Drain-Source On Resistance: 0.0134 ohm

Low on-resistance (RDS(on)) value results in minimal power loss and heat generation, improving efficiency and reliability.

Terminal Position: DUAL

Dual terminal position allows for easy integration into circuit layouts and provides flexibility in connection options.

Case Connection: DRAIN

Drain connection allows for efficient dissipation of heat generated during operation, helping to maintain the FET's performance and reliability.

Technical Specifications

Power Field Effect Transistors (FET) BSZ086P03NS3EGATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

ESD PROTECTED

Avalanche Energy Rating (EAS):

105 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

13.5 A

Maximum Drain-Source On Resistance:

.0134 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

160 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSZ086P03NS3EGATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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