Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVD5890NLT4G
Onsemi
NVD5890NLT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 123A max drain current. Ideal for switching applications, it features a built-in diode, 320mJ avalanche energy rating, and 0.0055 ohm max on-resistance. Suitable for high-power operations in automotive electronics due to AEC-Q101 compliance.
320 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
123 A
.0055 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
107 W
400 A
AEC-Q101
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
NTMFS4955NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 48 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
48 A
NTMFS4955NT3G
Power Field-Effect Transistors; Maximum Drain Current (Abs) (ID): 48 A; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;
NVD4856NT4G
NVD4856NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Max Pulsed Drain Current, and 0.0068 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its 60W Power Dissipation capability.
180.5 mJ
25 V
89 A
13.3 A
.0068 ohm
60 W
179 A
TIN
NTMFS4931NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Drain Current (Abs) (ID): 246 A; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
246 A
NTMFS4931NT3G
Power Field-Effect Transistors; Maximum Drain Current (Abs) (ID): 246 A; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
NTMFS4C13NT3G
NTMFS4C13NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 106A and EAS of 22mJ, making it suitable for high-power operations. With a low 0.0091 ohm RDS(on), this MOSFET offers efficient performance in various electronic devices.
22 mJ
30 V
38 A
7.2 A
.0091 ohm
127 pF
R-PDSO-F6
6
150 Cel
-55 Cel
21.6 W
106 A
FLAT
DUAL
NVB5404NT4G
NVB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 670A IDM, 1000mJ EAS, and 0.0045 ohm RDS(on). Package: PLASTIC/EPOXY, GULL WING terminals, and operates up to 175°C. AEC-Q101 compliant for automotive use.
1000 mJ
167 A
24 A
.0045 ohm
254 W
670 A
NVB5860NLT4G
NVB5860NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 660A IDM, 735mJ EAS, and 0.0036 ohm RDS(ON). With a max power dissipation of 283W and operating temperature of 175 °C, it is suitable for high-power electronic systems.
735 mJ
60 V
220 A
130 A
.0036 ohm
283 W
660 A
NVB60N06T4G
NVB60N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. Suitable for surface mount with GULL WING terminals, it has an EAS of 454mJ and AEC-Q101 standard compliance.
454 mJ
60 A
.014 ohm
180 A
NVD3055L170T4G
NVD3055L170T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 175 °C Max Operating Temp and 30mJ EAS.
30 mJ
9 A
.17 ohm
28.5 W
27 A
NTMFS4935NCT1G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 93 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
93 A
NTMFS4935NCT3G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Drain Current (Abs) (ID): 93 A;
NDD01N60-1G
NDD01N60-1G by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance in a TO-252 package.
13 mJ
600 V
1.5 A
8.5 ohm
R-PSIP-T3
3
IN-LINE
46 W
6 A
NO
THROUGH-HOLE
NDD01N60T4G
NDD01N60T4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 46W in enhancement mode operation. Suitable for use in various electronic devices due to its N-channel configuration and built-in diode.
NDD02N40-1G
NDD02N40-1G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in circuits where N-channel MOSFETs with built-in diode are needed.
120 mJ
400 V
1.7 A
39 W
6.9 A
NDD02N40T4G
NDD02N40T4G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for power applications requiring high drain current handling capabilities.
NDT01N60T1G
Onsemi's NDT01N60T1G is a Power FET with 600V DS Breakdown Voltage, 1.5A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 2.5W in enhancement mode operation at temperatures up to 150 °C.
.4 A
TO-261AA
R-PDSO-G4
4
2.5 W
NVMD6N03R2G
NVMD6N03R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.032 ohm RDS(ON). It's used for SWITCHING applications in automotive (AEC-Q101) due to its 30A IDM and 325mJ EAS ratings.
ULTRA LOW ON RESISTANCE
325 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.032 ohm
R-PDSO-G8
8
30 A
Tin (Sn)
NVMFD5873NLT1G
NVMFD5873NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 190A pulsed drain current, and 0.013 ohm max on-resistance. It is used in automotive applications due to its AEC-Q101 reference standard compliance and 175°C max operating temperature.
40 mJ
58 A
10 A
.013 ohm
190 A
NVD3055-150T4G
NVD3055-150T4G by Onsemi is a N-channel FET with 60V DS breakdown voltage, 27A pulsed drain current, and 30mJ avalanche energy rating. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 28.8W at 175 °C.
.15 ohm
40 pF
28.8 W
75 ns
105 ns
NTDV5804NT4G
NTDV5804NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 125A Max Pulsed Drain Current, and 0.0075 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and high current handling capabilities.
195 mJ
69 A
.0075 ohm
71 W
125 A
NVD4805NT4G
NVD4805NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 175A Max Pulsed Drain Current, and 0.0074 ohm Max RDS(on). Ideal for high-power switching circuits in automotive and industrial electronics due to its AEC-Q101 compliance.
288 mJ
95 A
12.7 A
.0074 ohm
79 W
175 A
NDD60N360U1-1G
NDD60N360U1-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 44A IDM, and 64mJ EAS. Ideal for applications requiring high power dissipation in single-channel configurations with built-in diode, such as industrial motor drives or power supplies.
64 mJ
11 A
.36 ohm
114 W
44 A
NDD60N360U1T4G
NDD60N360U1T4G by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS. Ideal for power applications, it operates in Enhancement Mode with 114W Power Dissipation and 150 °C Max Temp.
NTMFD4C20NT1G
NTMFD4C20NT1G by Onsemi is an N-CHANNEL Power FET with 27.4A max drain current and 4.6W max power dissipation. Ideal for applications requiring high power handling in a compact form factor, such as power supplies and motor control systems. Operating temperature up to 150°C ensures reliable performance in demanding environments.
27.4 A
4.6 W
Matte Tin (Sn) - annealed
NDT02N40T1G
Onsemi's NDT02N40T1G is a Power FET with 400V DS Breakdown Voltage, 1.6A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for power management applications requiring high efficiency and low power dissipation.
2 W
1.6 A
NTBV75N06T4G
NTBV75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
844 mJ
75 A
.0095 ohm
214 W
225 A
NVD3055-094T4G
NVD3055-094T4G by Onsemi is an N-channel Power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.094 ohm max drain-source resistance, and operates in enhancement mode.
61 mJ
12 A
.094 ohm
48 W
45 A
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, 329A IDM, and 0.012 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
80 mJ
15 A
.012 ohm
27 W
329 A
NVMFD5853NLWFT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
34 A
.015 ohm
24 W
165 A
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 190A IDM, and 0.013 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
17 A
.06 ohm
23 W
74 A
NVMFD5877NLWFT3G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
NVF2955PT1G
NVF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A IDM, 225mJ EAS, and 0.185 ohm Drain-Source Resistance. With ENHANCEMENT MODE operation and AEC-Q101 standard compliance, it offers reliable performance in automotive electronics.
225 mJ
.185 ohm
P-CHANNEL
BFL4007-1E
BFL4007-1E by Onsemi is a N-CHANNEL Power FET with 8.7A ID and 40W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies and motor control systems. Operating up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR technology and TIN terminal finish.
8.7 A
40 W
FET General Purpose Powers
2SK3820-DL-1E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
26 A
50 W
BFL4036-1E
BFL4036-1E by Onsemi is a N-CHANNEL FET with 14A max drain current and 37W power dissipation. Ideal for applications requiring high-power switching in environments up to 150 °C, such as power supplies and motor control systems.
14 A
37 W
BFL4037-1E
BFL4037-1E by Onsemi is a N-CHANNEL Power FET with 11A ID and 40W power dissipation. It operates at up to 150 °C, making it suitable for high-power applications in various industries. The METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
NVMFS4841NWFT1G
NVMFS4841NWFT1G by Onsemi is a single N-channel Power FET with 89A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
112 W
NVMFS5826NLWFT1G
NVMFS5826NLWFT1G by Onsemi is a N-CHANNEL FET with 26A max drain current and 39W power dissipation. Ideal for power management applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration and matte tin finish, it offers efficient performance in various electronic devices.
NVMFS5826NLWFT3G
NVMFS5826NLWFT3G by Onsemi is a single N-channel Power FET with 26A max drain current and 39W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 175 °C makes it suitable for demanding environments.
NVMFS5830NLWFT1G
NVMFS5830NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). It's used in power applications due to its 158W Power Dissipation, 1012A IDM, and 361mJ EAS rating. Ideal for automotive industry with AEC-Q101 standard compliance.
361 mJ
185 A
R-PDSO-F5
5
158 W
1012 A
NVMFS5830NLWFT3G
NVMFS5830NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5832NLWFT1G
NVMFS5832NLWFT1G by Onsemi is a single N-channel Power FET with 120A max drain current and 127W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
120 A
127 W
NVMFS5834NLWFT1G
NVMFS5834NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
48 mJ
.0136 ohm
276 A
NVMFS5834NLWFT3G
NVMFS5834NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
NOT SPECIFIED
NVMFS5844NLWFT1G
NVMFS5844NLWFT1G by Onsemi is a N-CHANNEL FET with 61A max drain current and 107W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation.
61 A
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