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NVF2955PT1G

Onsemi

NVF2955PT1G by Onsemi

NVF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A IDM, 225mJ EAS, and 0.185 ohm Drain-Source Resistance. With ENHANCEMENT MODE operation and AEC-Q101 standard compliance, it offers reliable performance in automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,031 parts In-Stock

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Digiode

USA . 2,350 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Ampacity Inc.

Singapore . 1,389 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 640 parts In-Stock

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$18.383

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SupplyDigital Components

Austria . 8,011 parts In-Stock

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TANS Electronics

Latvia . 6,481 parts In-Stock

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Problanco Electronics

Mexico . 4,609 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 879 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Corohmni

South Africa . 365 parts In-Stock

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Kulean Microsystems

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Overview

Upgrade your power management solutions with the NVF2955PT1G by Onsemi. This P-Channel Power Field Effect Transistor (FET) offers exceptional quality and reliability, making it a top choice for switching applications. With a maximum pulsed drain current of 17 A and a minimum DS breakdown voltage of 60 V, this transistor ensures optimal performance in enhancement mode operation. The small outline package style and surface mount design provide added convenience for installation. Trust Onsemi's expertise in semiconductor technology to deliver a premium product that brings value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, ensuring reliable performance.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where negative voltage is required.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltage applications effectively.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Avalanche Energy Rating (EAS): 225 mJ

Capable of withstanding high energy spikes, providing protection against voltage surges.

No. of Terminals: 4

Provides multiple connection points for flexibility in circuit design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and fast response times.

Maximum Drain-Source On Resistance: 0.185 ohm

Low on-resistance results in minimal power loss and high efficiency.

Terminal Position: DUAL

Allows for easy and secure connection in a variety of circuit configurations.

Reference Standard: AEC-Q101

Meets automotive industry quality standards for reliability and performance.

Technical Specifications

Power Field Effect Transistors (FET) NVF2955PT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

225 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.185 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

17 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVF2955PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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