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BFL4007-1E

Onsemi

BFL4007-1E by Onsemi

BFL4007-1E by Onsemi is a N-CHANNEL Power FET with 8.7A ID and 40W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies and motor control systems. Operating up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR technology and TIN terminal finish.

Median Price

$1.336

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 650 parts In-Stock

1+ parts

-

100+ parts

$1.260

1k+ parts

$1.130

10k+ parts

$1.060

650

-

$1.260

$1.130

$1.060

Verical

USA . 650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.413

10k+ parts

$1.325

650

-

-

$1.413

$1.325

Distributors (In-Stock)

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Digiode

USA . 971 parts In-Stock

1+ parts

$1.340

100+ parts

-

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971

$1.340

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Vyrian

USA . 4,236 parts In-Stock

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4,236

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 97 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

10k+ parts

$0.285

97

$0.297

-

-

$0.285

Northwest PG Solutions

USA . 1,491 parts In-Stock

1+ parts

$0.327

100+ parts

-

1k+ parts

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$0.288

1,491

$0.327

-

-

$0.288

Ampacity Inc.

Singapore . 306 parts In-Stock

1+ parts

$1.200

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-

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306

$1.200

-

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Corphita

USA . 1,409 parts In-Stock

1+ parts

$1.269

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1,409

$1.269

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$1.410

100+ parts

-

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111

$1.410

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Component Stockers USA

USA . 492 parts In-Stock

1+ parts

$1.430

100+ parts

$1.340

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-

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492

$1.430

$1.340

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Microchip USA

USA . 481 parts In-Stock

1+ parts

$8.775

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481

$8.775

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AZTECH Wire

Italy . 877 parts In-Stock

1+ parts

$19.060

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877

$19.060

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Kepictronics

USA . 33,000 parts In-Stock

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SupplyDigital Components

Austria . 5,668 parts In-Stock

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5,668

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TANS Electronics

Latvia . 3,002 parts In-Stock

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Kulean Microsystems

USA . 2,797 parts In-Stock

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2,797

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Problanco Electronics

Mexico . 1,827 parts In-Stock

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1,827

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Continental Prestige Electronics

USA . 650 parts In-Stock

1+ parts

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100+ parts

$1.290

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650

-

$1.290

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UHIMA Technologies

Türkiye . 373 parts In-Stock

1+ parts

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373

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Overview

Unlock the full potential of your power applications with the BFL4007-1E by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Field Effect Transistors. With a maximum drain current of 8.7A and a power dissipation of 40W, this N-CHANNEL FET offers unmatched performance. Whether you're looking to optimize power management in automotive, industrial, or consumer electronics, the BFL4007-1E provides the efficiency and durability you need. Trust Onsemi to deliver value and innovation in every product.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have better performance and higher efficiency compared to P-CHANNEL transistors.

Configuration: SINGLE

Single configuration makes the transistor easy to use and integrate in circuits.

Maximum Drain Current (Abs) (ID): 8.7 A

High maximum drain current allows for high power handling capability.

Maximum Power Dissipation (Abs): 40 W

High power dissipation rating ensures the transistor can handle high power loads without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good switching performance and low ON resistance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in high temperature environments.

Terminal Finish: TIN

TIN terminal finish ensures good conductivity and corrosion resistance.

Technical Specifications

Power Field Effect Transistors (FET) BFL4007-1E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8.7 A

Maximum Drain Current (ID):

8.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

TIN

Trade Compliance

BFL4007-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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