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BFL4004

Onsemi

BFL4004 by Onsemi

BFL4004 by Onsemi is a N-CHANNEL Power FET with 4.3A max drain current and 36W max power dissipation. Ideal for applications requiring high efficiency and performance in enhancement mode operation up to 150 °C, featuring metal-oxide semiconductor technology.

Median Price

$3.087

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,870 parts In-Stock

1+ parts

-

100+ parts

$2.760

1k+ parts

$2.470

10k+ parts

$2.320

10,870

-

$2.760

$2.470

$2.320

DigiKey

USA . 10,870 parts In-Stock

1+ parts

-

100+ parts

$3.190

1k+ parts

$3.190

10k+ parts

$3.190

10,870

-

$3.190

$3.190

$3.190

Verical

USA . 111 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.087

10k+ parts

$2.900

111

-

-

$3.087

$2.900

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,302 parts In-Stock

1+ parts

$2.916

100+ parts

-

1k+ parts

-

10k+ parts

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1,302

$2.916

-

-

-

Vyrian

USA . 656 parts In-Stock

1+ parts

$3.070

100+ parts

-

1k+ parts

-

10k+ parts

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656

$3.070

-

-

-

DigiKey Marketplace

USA . 10,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,870

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 83 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

83

$0.095

-

-

$0.091

Northwest PG Solutions

USA . 2,214 parts In-Stock

1+ parts

$0.104

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

2,214

$0.104

-

-

$0.092

Corphita

USA . 834 parts In-Stock

1+ parts

$2.763

100+ parts

-

1k+ parts

-

10k+ parts

-

834

$2.763

-

-

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Corohmni

South Africa . 318 parts In-Stock

1+ parts

$3.070

100+ parts

-

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10k+ parts

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318

$3.070

-

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Component Stockers USA

USA . 79 parts In-Stock

1+ parts

$3.100

100+ parts

$2.910

1k+ parts

$2.630

10k+ parts

$2.630

79

$3.100

$2.910

$2.630

$2.630

TANS Electronics

Latvia . 6,628 parts In-Stock

1+ parts

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6,628

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Microchip USA

USA . 5,842 parts In-Stock

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5,842

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Kulean Microsystems

USA . 4,563 parts In-Stock

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4,563

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SupplyDigital Components

Austria . 4,517 parts In-Stock

1+ parts

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100+ parts

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4,517

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Problanco Electronics

Mexico . 997 parts In-Stock

1+ parts

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997

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Continental Prestige Electronics

USA . 111 parts In-Stock

1+ parts

-

100+ parts

$2.820

1k+ parts

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10k+ parts

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111

-

$2.820

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UHIMA Technologies

Türkiye . 17 parts In-Stock

1+ parts

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17

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Overview

Unlock the power of innovation with the Onsemi BFL4004 Power Field Effect Transistor. Manufactured by industry leader Onsemi, this N-CHANNEL FET offers unparalleled quality and reliability. Ideal for a wide range of applications, this Enhancement Mode transistor delivers exceptional performance with a maximum drain current of 4.3A and a maximum power dissipation of 36W. Upgrade your projects with the BFL4004 and experience the value, benefits, and advantages it brings to your designs. Elevate your creations with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower ON resistance and higher power handling capabilities compared to P-channel FETs, making them a good choice for high power applications.

Configuration: SINGLE

Single configuration FETs are simpler to design into circuits and can be easier to control compared to multiple channel configurations, making them suitable for basic power switching applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require positive gate voltage to turn them on, providing better control over the switching behavior and reducing power consumption in the off state.

Maximum Drain Current (Abs): 4.3 A

With a maximum drain current of 4.3 A, this FET can handle moderate to high power loads, making it suitable for a variety of power switching applications.

Maximum Power Dissipation (Abs): 36 W

The high maximum power dissipation of 36 W allows this FET to handle high power levels without overheating, ensuring reliable operation in demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance in terms of switching speed and efficiency, making this FET suitable for high-frequency applications or power conversion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high temperature environments without performance degradation, making it suitable for industrial applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finishes ensures good electrical contact and corrosion resistance, enhancing the reliability and longevity of the FET in various operating conditions.

Technical Specifications

Power Field Effect Transistors (FET) BFL4004 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.3 A

Maximum Drain Current (ID):

4.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

BFL4004 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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