Loading...

BFL4007

Onsemi

BFL4007 by Onsemi

BFL4007 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a max IDM of 49A and EAS of 215mJ, ideal for SWITCHING applications. The transistor has 0.68 ohm RDS(on), operates in ENHANCEMENT MODE, and comes in a RECTANGULAR package with THROUGH-HOLE terminals.

Median Price

$2.950

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,559 parts In-Stock

1+ parts

-

100+ parts

$2.640

1k+ parts

$2.360

10k+ parts

$2.220

12,559

-

$2.640

$2.360

$2.220

DigiKey

USA . 12,559 parts In-Stock

1+ parts

-

100+ parts

$3.480

1k+ parts

-

10k+ parts

-

12,559

-

$3.480

-

-

Verical

USA . 12,559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.950

10k+ parts

$2.775

12,559

-

-

$2.950

$2.775

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,443 parts In-Stock

1+ parts

$2.784

100+ parts

-

1k+ parts

-

10k+ parts

-

1,443

$2.784

-

-

-

Vyrian

USA . 583 parts In-Stock

1+ parts

$2.930

100+ parts

-

1k+ parts

-

10k+ parts

-

583

$2.930

-

-

-

Chip Stock

USA . 15,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,017

-

-

-

-

DigiKey Marketplace

USA . 12,559 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,559

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 484 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

$0.116

484

$0.121

-

-

$0.116

Northwest PG Solutions

USA . 168 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

$0.117

168

$0.133

-

-

$0.117

Ampacity Inc.

Singapore . 12,444 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

-

12,444

$2.490

-

-

-

Corphita

USA . 1,840 parts In-Stock

1+ parts

$2.637

100+ parts

-

1k+ parts

-

10k+ parts

-

1,840

$2.637

-

-

-

Corohmni

South Africa . 480 parts In-Stock

1+ parts

$2.930

100+ parts

-

1k+ parts

-

10k+ parts

-

480

$2.930

-

-

-

Microchip USA

USA . 432 parts In-Stock

1+ parts

$18.265

100+ parts

-

1k+ parts

-

10k+ parts

-

432

$18.265

-

-

-

Kepictronics

USA . 34,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

34,104

-

-

-

-

TANS Electronics

Latvia . 4,747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,747

-

-

-

-

Kulean Microsystems

USA . 4,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,568

-

-

-

-

SupplyDigital Components

Austria . 4,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,017

-

-

-

-

Problanco Electronics

Mexico . 1,774 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,774

-

-

-

-

UHIMA Technologies

Türkiye . 242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

242

-

-

-

-

Overview

Unleash the power of innovation with the BFL4007 by Onsemi, a high-quality Power Field Effect Transistor designed for switching applications. Manufactured with precision and expertise by Onsemi, this N-CHANNEL FET offers unparalleled performance and reliability. With a built-in diode, 600V breakdown voltage, and maximum pulsed drain current of 49A, this transistor is perfect for enhancing your electronic projects. Say goodbye to limitations and hello to endless possibilities with the BFL4007.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, making the product long-lasting and suitable for rough conditions.

Polarity or Channel Type: N-CHANNEL

Offers efficient conduction of current and high performance in N-channel applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Combines the functions of a single transistor with a diode, allowing for simplified circuit design and cost-effectiveness.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and reliability in switching circuits.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, the transistor can handle high voltages safely, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into electronic systems with standard configurations.

Terminal Form: THROUGH-HOLE

Allows for easy and secure connection to circuit boards, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low power consumption, making them efficient for various applications.

Maximum Pulsed Drain Current (IDM): 49 A

Capable of handling high current pulses, making it suitable for applications where high power is required intermittently.

Avalanche Energy Rating (EAS): 215 mJ

Can withstand high-energy spikes and transients, ensuring reliable operation in harsh environments.

No. of Terminals: 3

A standard configuration with 3 terminals for easy integration into existing circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers secure mounting and heat dissipation, ensuring stable operation at high temperatures.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and performance characteristics, suitable for demanding applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, temperature stability, and quality performance, making them ideal for a wide range of applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance.

Maximum Drain Current (ID): 8.7 A

With a high maximum drain current rating, the transistor can handle high current loads effectively, making it versatile for various applications.

Maximum Drain-Source On Resistance: 0.68 ohm

Low on-resistance minimizes power loss and improves efficiency, making it suitable for high-power applications.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into circuits, ensuring ease of use and reliability.

Case Connection: ISOLATED

Isolated case connection provides protection against electrical interference and ensures safe operation in various environments.

Technical Specifications

Power Field Effect Transistors (FET) BFL4007 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

215 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

8.7 A

Maximum Drain-Source On Resistance:

.68 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

49 A

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BFL4007 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17