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SMP3003-TL-1E

Onsemi

SMP3003-TL-1E by Onsemi

SMP3003-TL-1E by Onsemi is a P-CHANNEL FET with 75V DS Breakdown Voltage, 400A IDM, and 0.011 ohm RDS(ON). Ideal for power applications due to its EAS of 468mJ, ENHANCEMENT MODE operation, and DRAIN case connection.

Median Price

$2.320

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 268 parts In-Stock

1+ parts

$2.320

100+ parts

$2.180

1k+ parts

$1.970

10k+ parts

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268

$2.320

$2.180

$1.970

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Distributors (In-Stock)

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Digiode

USA . 206 parts In-Stock

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$2.204

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206

$2.204

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Nova Conductors

Japan . 54 parts In-Stock

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$2.838

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54

$2.838

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Chip Stock

USA . 11,100 parts In-Stock

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Vyrian

USA . 2,971 parts In-Stock

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Global Solutions Electronics Company

USA . 42 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,441 parts In-Stock

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$0.600

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4,441

$0.600

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Ampacity Inc.

Singapore . 268 parts In-Stock

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$1.970

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268

$1.970

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Semicontronic

India . 268 parts In-Stock

1+ parts

$1.970

100+ parts

$1.921

1k+ parts

$1.911

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-

268

$1.970

$1.921

$1.911

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Corphita

USA . 384 parts In-Stock

1+ parts

$2.088

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384

$2.088

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Corohmni

South Africa . 115 parts In-Stock

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$2.320

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Argo Parts USA

USA . 3,082 parts In-Stock

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$2.838

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3,082

$2.838

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Continental Prestige Electronics

USA . 2,912 parts In-Stock

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$2.838

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$2.781

2,912

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$2.781

Netroflash

USA . 500 parts In-Stock

1+ parts

$2.838

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$2.696

10k+ parts

$2.639

500

$2.838

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$2.696

$2.639

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.895

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$2.895

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$2.895

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3,000

$2.895

$2.895

$2.895

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AZTECH Wire

Italy . 672 parts In-Stock

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$16.095

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672

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Kepictronics

USA . 77,600 parts In-Stock

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Lixinc

USA . 16,118 parts In-Stock

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Perfect Parts

USA . 11,256 parts In-Stock

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Problanco Electronics

Mexico . 8,143 parts In-Stock

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SupplyDigital Components

Austria . 7,144 parts In-Stock

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Kulean Microsystems

USA . 5,918 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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980

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TANS Electronics

Latvia . 289 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of Onsemi's SMP3003-TL-1E Power Field Effect Transistor. With a single configuration and built-in diode, this P-channel transistor offers enhanced performance for a wide range of applications. From automotive to industrial electronics, this transistor provides maximum efficiency and durability. Trust Onsemi's cutting-edge technology to deliver exceptional value and unmatched benefits to meet all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable performance and longevity.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a negative voltage is required, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, saving space and reducing component count.

Surface Mount: YES

Enables easy and efficient integration onto circuit boards, saving assembly time and cost.

Minimum DS Breakdown Voltage: 75 V

Provides a high breakdown voltage, making it suitable for applications requiring high voltage operation.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on PCBs, enhancing assembly efficiency.

Terminal Form: GULL WING

Allows for a secure and reliable connection to the circuit board, reducing the risk of disconnection.

Operating Mode: ENHANCEMENT MODE

Provides control over the flow of current, allowing for efficient power management in various applications.

Maximum Pulsed Drain Current (IDM): 400 A

Capable of handling high current loads, suitable for demanding applications where peak power is required.

Avalanche Energy Rating (EAS): 468 mJ

Offers protection against voltage spikes and surges, ensuring the reliability and longevity of the product.

No. of Terminals: 2

Simplifies circuit connections with only two terminals, reducing complexity and assembly time.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB, ideal for applications with size constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high switching speeds and low power consumption, enhancing overall performance efficiency.

Transistor Element Material: SILICON

Ensures high reliability and durability, suitable for long-term operation in various environments.

Terminal Finish: MATTE TIN

Ensures a reliable electrical connection and prevents corrosion, maintaining performance over time.

Maximum Drain Current (ID): 100 A

Capable of handling high continuous current loads, suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.011 ohm

Low on-resistance minimizes power loss and heat generation, improving overall efficiency.

Terminal Position: SINGLE

Simplifies circuit design and board layout, making installation and connection easier.

Case Connection: DRAIN

Provides efficient heat dissipation and thermal management, ensuring stable and reliable operation.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and reliable soldering during assembly, preventing damage to the component.

Peak Reflow Temperature °C: 245

Supports high-temperature soldering processes, ensuring proper component attachment and reliability.

Technical Specifications

Power Field Effect Transistors (FET) SMP3003-TL-1E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

468 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

75 V

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

400 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SMP3003-TL-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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